Phase stability of epitaxial KTaxNb1-xO3 thin films deposited by metalorganic chemical vapor deposition

B. M. Nichols*, B. H. Hoerman, J. H. Hwang, T. O. Mason, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


The phase stability of epitaxial KTaxNb1-xO3 (0 ≤ x ≤ 1) thin films, with compositions over the entire solid solution range, was investigated. KTaxNb1-xO3 thin films were deposited on (100) MgAl2O4 substrates by metalorganic chemical vapor deposition. Films with compositions x ≤ 0.30 were orthorhombic, as determined by x-ray diffraction. Dielectric measurements at room temperature indicated the presence of morphotropic phase boundaries at x = 0.30 and at x = 0.74. Temperature-dependent measurements of the dielectric constant for KNbO3 from 80 to 800 K indicated three structural phase transitions at 710, 520, and 240 K. For intermediate compositions, a decrease in the Curie and tetragonal-orthorhombic transition temperatures was observed with increasing Ta atomic percent, similar to the bulk phase equilibrium. In contrast to bulk materials, an increase in the orthorhombic-rhombohedral transition temperature with increasing x was observed for the films, resulting in the stabilization of a rhombohedral phase at room temperature for compositions 0.45 ≤ x ≤0.73. Differences between the phase stability for the thin films and bulk were attributed to lattice misfit strain.

Original languageEnglish (US)
Pages (from-to)106-110
Number of pages5
JournalJournal of Materials Research
Issue number1
StatePublished - Jan 2003

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Phase stability of epitaxial KTaxNb1-xO3 thin films deposited by metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this