Phase stabilization of δ-Bi2 O3 nanostructures by epitaxial growth onto single crystal SrTiO3 or DyScO3 substrates

D. L. Proffit; G. R. Bai; D. D. Fong; T. T. Fister; S. O. Hruszkewycz; M. J. Highland; P. M. Baldo; P. H. Fuoss; T. O. Mason; J. A. Eastman

doi:10.1063/1.3291068

Phase stabilization of δ-Bi₂ O₃ nanostructures by epitaxial growth onto single crystal SrTiO₃ or DyScO₃ substrates

D. L. Proffit, G. R. Bai, D. D. Fong, T. T. Fister, S. O. Hruszkewycz, M. J. Highland, P. M. Baldo, P. H. Fuoss, T. O. Mason, J. A. Eastman

Materials Science and Engineering

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17 Scopus citations

Abstract

We observe that the high-temperature δ-phase of Bi₂ O ₃ is stabilized to room temperature by the epitaxial growth of nanostructures onto either (001)-oriented SrTiO₃ or (001)_p -oriented DyScO₃ single crystal substrates. In addition, the morphology can be controlled by the miscut of the substrate. Synchrotron x-ray scattering observations at controlled temperatures and oxygen partial pressures reveal that the δ -Bi₂ O₃ nanostructures are coherently strained to the substrates at room temperature. Annealing the nanostructures at 600 °C causes gradual conversion of the (001)-oriented δ -phase to an unidentified strain-relaxed phase.

Original language	English (US)
Article number	021905
Journal	Applied Physics Letters
Volume	96
Issue number	2
DOIs	https://doi.org/10.1063/1.3291068
State	Published - 2010

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Physics and Astronomy (miscellaneous)

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@article{42a0b0a4d3934cb7a26dd3daa2bd4633,

title = "Phase stabilization of δ-Bi2 O3 nanostructures by epitaxial growth onto single crystal SrTiO3 or DyScO3 substrates",

abstract = "We observe that the high-temperature δ-phase of Bi2 O 3 is stabilized to room temperature by the epitaxial growth of nanostructures onto either (001)-oriented SrTiO3 or (001)p -oriented DyScO3 single crystal substrates. In addition, the morphology can be controlled by the miscut of the substrate. Synchrotron x-ray scattering observations at controlled temperatures and oxygen partial pressures reveal that the δ -Bi2 O3 nanostructures are coherently strained to the substrates at room temperature. Annealing the nanostructures at 600 °C causes gradual conversion of the (001)-oriented δ -phase to an unidentified strain-relaxed phase.",

author = "Proffit, {D. L.} and Bai, {G. R.} and Fong, {D. D.} and Fister, {T. T.} and Hruszkewycz, {S. O.} and Highland, {M. J.} and Baldo, {P. M.} and Fuoss, {P. H.} and Mason, {T. O.} and Eastman, {J. A.}",

note = "Funding Information: This work was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. D.L.P. and T.O.M. also acknowledge support of the U.S. Department of Energy under Contract No. DE-FG02-05ER-46255.",

year = "2010",

doi = "10.1063/1.3291068",

language = "English (US)",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

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TY - JOUR

T1 - Phase stabilization of δ-Bi2 O3 nanostructures by epitaxial growth onto single crystal SrTiO3 or DyScO3 substrates

AU - Proffit, D. L.

AU - Bai, G. R.

AU - Fong, D. D.

AU - Fister, T. T.

AU - Hruszkewycz, S. O.

AU - Highland, M. J.

AU - Baldo, P. M.

AU - Fuoss, P. H.

AU - Mason, T. O.

AU - Eastman, J. A.

N1 - Funding Information: This work was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. D.L.P. and T.O.M. also acknowledge support of the U.S. Department of Energy under Contract No. DE-FG02-05ER-46255.

PY - 2010

Y1 - 2010

N2 - We observe that the high-temperature δ-phase of Bi2 O 3 is stabilized to room temperature by the epitaxial growth of nanostructures onto either (001)-oriented SrTiO3 or (001)p -oriented DyScO3 single crystal substrates. In addition, the morphology can be controlled by the miscut of the substrate. Synchrotron x-ray scattering observations at controlled temperatures and oxygen partial pressures reveal that the δ -Bi2 O3 nanostructures are coherently strained to the substrates at room temperature. Annealing the nanostructures at 600 °C causes gradual conversion of the (001)-oriented δ -phase to an unidentified strain-relaxed phase.

AB - We observe that the high-temperature δ-phase of Bi2 O 3 is stabilized to room temperature by the epitaxial growth of nanostructures onto either (001)-oriented SrTiO3 or (001)p -oriented DyScO3 single crystal substrates. In addition, the morphology can be controlled by the miscut of the substrate. Synchrotron x-ray scattering observations at controlled temperatures and oxygen partial pressures reveal that the δ -Bi2 O3 nanostructures are coherently strained to the substrates at room temperature. Annealing the nanostructures at 600 °C causes gradual conversion of the (001)-oriented δ -phase to an unidentified strain-relaxed phase.

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U2 - 10.1063/1.3291068

DO - 10.1063/1.3291068

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VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 021905

ER -

Phase stabilization of δ-Bi₂ O₃ nanostructures by epitaxial growth onto single crystal SrTiO₃ or DyScO₃ substrates

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