Phase stabilization of δ-Bi2 O3 nanostructures by epitaxial growth onto single crystal SrTiO3 or DyScO3 substrates

D. L. Proffit, G. R. Bai, D. D. Fong, T. T. Fister, S. O. Hruszkewycz, M. J. Highland, P. M. Baldo, P. H. Fuoss, T. O. Mason, J. A. Eastman

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21 Scopus citations

Abstract

We observe that the high-temperature δ-phase of Bi2 O 3 is stabilized to room temperature by the epitaxial growth of nanostructures onto either (001)-oriented SrTiO3 or (001)p -oriented DyScO3 single crystal substrates. In addition, the morphology can be controlled by the miscut of the substrate. Synchrotron x-ray scattering observations at controlled temperatures and oxygen partial pressures reveal that the δ -Bi2 O3 nanostructures are coherently strained to the substrates at room temperature. Annealing the nanostructures at 600 °C causes gradual conversion of the (001)-oriented δ -phase to an unidentified strain-relaxed phase.

Original languageEnglish (US)
Article number021905
JournalApplied Physics Letters
Volume96
Issue number2
DOIs
StatePublished - 2010

Funding

This work was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. D.L.P. and T.O.M. also acknowledge support of the U.S. Department of Energy under Contract No. DE-FG02-05ER-46255.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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