Phonon-Assisted deep level luminescence in heavily Mg-Doped inGaN

B. Han*, M. P. Ulmer, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Deep level luminescence in In0.07Ga0.93N:Mg was examined. A strong photoluminescence (PL) band at 2.45 eV was observed with a well-resolved fine structure that was attributed to phonon-assisted donor-acceptor pair (DAP) recombination. Analysis of the fine structure reveals a large Huang-Rhys parameter of 6.5 for this DAP band, indicating strong localization of carriers at DAP centers. From the phonon replicas, the longitudinal-optical (LO) phonon energy was determined to be 105 meV. The large, measured phonon energy was attributed to the large compressive strain caused by compositional fluctuations in the films.

Original languageEnglish (US)
Pages (from-to)431-435
Number of pages5
JournalJournal of Electronic Materials
Volume33
Issue number5
DOIs
StatePublished - May 2004

Keywords

  • Carrier localization
  • Compositional fluctuation
  • Electron-phonon interaction
  • Wide bandgap

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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