Phonon-Assisted deep level luminescence in heavily Mg-Doped inGaN

B. Han; M. P. Ulmer; B. W. Wessels

doi:10.1007/s11664-004-0197-4

Phonon-Assisted deep level luminescence in heavily Mg-Doped inGaN

B. Han^*, M. P. Ulmer, B. W. Wessels

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Deep level luminescence in In_0.07Ga_0.93N:Mg was examined. A strong photoluminescence (PL) band at 2.45 eV was observed with a well-resolved fine structure that was attributed to phonon-assisted donor-acceptor pair (DAP) recombination. Analysis of the fine structure reveals a large Huang-Rhys parameter of 6.5 for this DAP band, indicating strong localization of carriers at DAP centers. From the phonon replicas, the longitudinal-optical (LO) phonon energy was determined to be 105 meV. The large, measured phonon energy was attributed to the large compressive strain caused by compositional fluctuations in the films.

Original language	English (US)
Pages (from-to)	431-435
Number of pages	5
Journal	Journal of Electronic Materials
Volume	33
Issue number	5
DOIs	https://doi.org/10.1007/s11664-004-0197-4
State	Published - May 2004

Keywords

Carrier localization
Compositional fluctuation
Electron-phonon interaction
Wide bandgap

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-004-0197-4

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title = "Phonon-Assisted deep level luminescence in heavily Mg-Doped inGaN",

abstract = "Deep level luminescence in In0.07Ga0.93N:Mg was examined. A strong photoluminescence (PL) band at 2.45 eV was observed with a well-resolved fine structure that was attributed to phonon-assisted donor-acceptor pair (DAP) recombination. Analysis of the fine structure reveals a large Huang-Rhys parameter of 6.5 for this DAP band, indicating strong localization of carriers at DAP centers. From the phonon replicas, the longitudinal-optical (LO) phonon energy was determined to be 105 meV. The large, measured phonon energy was attributed to the large compressive strain caused by compositional fluctuations in the films.",

keywords = "Carrier localization, Compositional fluctuation, Electron-phonon interaction, Wide bandgap",

author = "B. Han and Ulmer, {M. P.} and Wessels, {B. W.}",

note = "Funding Information: This work was supported by the NASA Office of Space Sciences under Grant No. NAG5-1147.",

year = "2004",

month = may,

doi = "10.1007/s11664-004-0197-4",

language = "English (US)",

volume = "33",

pages = "431--435",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

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TY - JOUR

T1 - Phonon-Assisted deep level luminescence in heavily Mg-Doped inGaN

AU - Han, B.

AU - Ulmer, M. P.

AU - Wessels, B. W.

N1 - Funding Information: This work was supported by the NASA Office of Space Sciences under Grant No. NAG5-1147.

PY - 2004/5

Y1 - 2004/5

N2 - Deep level luminescence in In0.07Ga0.93N:Mg was examined. A strong photoluminescence (PL) band at 2.45 eV was observed with a well-resolved fine structure that was attributed to phonon-assisted donor-acceptor pair (DAP) recombination. Analysis of the fine structure reveals a large Huang-Rhys parameter of 6.5 for this DAP band, indicating strong localization of carriers at DAP centers. From the phonon replicas, the longitudinal-optical (LO) phonon energy was determined to be 105 meV. The large, measured phonon energy was attributed to the large compressive strain caused by compositional fluctuations in the films.

AB - Deep level luminescence in In0.07Ga0.93N:Mg was examined. A strong photoluminescence (PL) band at 2.45 eV was observed with a well-resolved fine structure that was attributed to phonon-assisted donor-acceptor pair (DAP) recombination. Analysis of the fine structure reveals a large Huang-Rhys parameter of 6.5 for this DAP band, indicating strong localization of carriers at DAP centers. From the phonon replicas, the longitudinal-optical (LO) phonon energy was determined to be 105 meV. The large, measured phonon energy was attributed to the large compressive strain caused by compositional fluctuations in the films.

KW - Carrier localization

KW - Compositional fluctuation

KW - Electron-phonon interaction

KW - Wide bandgap

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DO - 10.1007/s11664-004-0197-4

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EP - 435

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Phonon-Assisted deep level luminescence in heavily Mg-Doped inGaN

Abstract

Keywords

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