Photo-and electroluminescence of ZnSe grown by OMVPE

Baojun Yang; Jiying Zhang; Bruce W. Wessels

doi:10.1016/0022-2313(88)90446-2

Photo-and electroluminescence of ZnSe grown by OMVPE

Baojun Yang^*, Jiying Zhang, Bruce W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Undoped ZnSe epilayers have grown on (100) GaAs substrates by atmospheric pressure organometallic vapor phase epitaxy (OMVPE) with dimethylzinc (DMZ) and hydrogen selenide (H₂Se) as source. The epilayers grown under 270-325°C exhibit low resistivity of about 1Ω·cm. The carrier concentration and mobility are of the order of 10¹⁶cm^-3 and 300-400 cm².v^-1.s^-1 respectively at RT. A strong NBE emission of PL and EL spectra are observed at 77K and RT respectively.

Original language	English (US)
Pages (from-to)	804-805
Number of pages	2
Journal	Journal of Luminescence
Volume	40-41
Issue number	C
DOIs	https://doi.org/10.1016/0022-2313(88)90446-2
State	Published - Feb 1988

ASJC Scopus subject areas

Biophysics
Atomic and Molecular Physics, and Optics
General Chemistry
Biochemistry
Condensed Matter Physics

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title = "Photo-and electroluminescence of ZnSe grown by OMVPE",

abstract = "Undoped ZnSe epilayers have grown on (100) GaAs substrates by atmospheric pressure organometallic vapor phase epitaxy (OMVPE) with dimethylzinc (DMZ) and hydrogen selenide (H2Se) as source. The epilayers grown under 270-325°C exhibit low resistivity of about 1Ω·cm. The carrier concentration and mobility are of the order of 1016cm-3 and 300-400 cm2.v-1.s-1 respectively at RT. A strong NBE emission of PL and EL spectra are observed at 77K and RT respectively.",

author = "Baojun Yang and Jiying Zhang and Wessels, {Bruce W.}",

year = "1988",

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doi = "10.1016/0022-2313(88)90446-2",

language = "English (US)",

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T1 - Photo-and electroluminescence of ZnSe grown by OMVPE

AU - Yang, Baojun

AU - Zhang, Jiying

AU - Wessels, Bruce W.

PY - 1988/2

Y1 - 1988/2

N2 - Undoped ZnSe epilayers have grown on (100) GaAs substrates by atmospheric pressure organometallic vapor phase epitaxy (OMVPE) with dimethylzinc (DMZ) and hydrogen selenide (H2Se) as source. The epilayers grown under 270-325°C exhibit low resistivity of about 1Ω·cm. The carrier concentration and mobility are of the order of 1016cm-3 and 300-400 cm2.v-1.s-1 respectively at RT. A strong NBE emission of PL and EL spectra are observed at 77K and RT respectively.

AB - Undoped ZnSe epilayers have grown on (100) GaAs substrates by atmospheric pressure organometallic vapor phase epitaxy (OMVPE) with dimethylzinc (DMZ) and hydrogen selenide (H2Se) as source. The epilayers grown under 270-325°C exhibit low resistivity of about 1Ω·cm. The carrier concentration and mobility are of the order of 1016cm-3 and 300-400 cm2.v-1.s-1 respectively at RT. A strong NBE emission of PL and EL spectra are observed at 77K and RT respectively.

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JO - Journal of Luminescence

JF - Journal of Luminescence

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ER -

Photo-and electroluminescence of ZnSe grown by OMVPE

Abstract

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