Photo-and electroluminescence of ZnSe grown by OMVPE

Baojun Yang*, Jiying Zhang, Bruce W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Undoped ZnSe epilayers have grown on (100) GaAs substrates by atmospheric pressure organometallic vapor phase epitaxy (OMVPE) with dimethylzinc (DMZ) and hydrogen selenide (H2Se) as source. The epilayers grown under 270-325°C exhibit low resistivity of about 1Ω·cm. The carrier concentration and mobility are of the order of 1016cm-3 and 300-400 cm2.v-1.s-1 respectively at RT. A strong NBE emission of PL and EL spectra are observed at 77K and RT respectively.

Original languageEnglish (US)
Pages (from-to)804-805
Number of pages2
JournalJournal of Luminescence
Volume40-41
Issue numberC
DOIs
StatePublished - Feb 1988

ASJC Scopus subject areas

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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