Photo-Induced Current Transient Spectroscopy  of Semi-insulating Single Crystal Cs2Hg6S7

Z. Liu; J. A. Peters; H. Li; M. G. Kanatzidis; J. Im; H. Jin; A. J. Freeman; B. W. Wessels

doi:10.1007/s11664-014-3372-2

Photo-Induced Current Transient Spectroscopy of Semi-insulating Single Crystal Cs₂Hg₆S₇

Z. Liu^*, J. A. Peters, H. Li, M. G. Kanatzidis, J. Im, H. Jin, A. J. Freeman, B. W. Wessels

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The ternary compound Cs₂Hg₆S₇ has shown considerable promise as a wide gap semiconductor for hard radiation detection at room temperature. We report on the measurement of defect levels in Cs₂Hg₆S₇ using photo-induced current transient spectroscopy. We observe a series of defect levels with mean activation energies of 0.053, 0.052, 0.34, 0.35, and 0.46 eV. The defects are attributed to Cs vacancies and Cs and Hg antisite defects. Defect capture cross-sections are in the range 10⁻²⁰–10⁻¹⁵ cm².

Original language	English (US)
Pages (from-to)	222-226
Number of pages	5
Journal	Journal of Electronic Materials
Volume	44
Issue number	1
DOIs	https://doi.org/10.1007/s11664-014-3372-2
State	Published - Jan 2015

Keywords

Cs-based semiconductor
defects
photoconductivity
wide gap semiconductor
γ-ray

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-014-3372-2

Cite this

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title = "Photo-Induced Current Transient Spectroscopy of Semi-insulating Single Crystal Cs2Hg6S7 ",

abstract = "The ternary compound Cs2Hg6S7 has shown considerable promise as a wide gap semiconductor for hard radiation detection at room temperature. We report on the measurement of defect levels in Cs2Hg6S7 using photo-induced current transient spectroscopy. We observe a series of defect levels with mean activation energies of 0.053, 0.052, 0.34, 0.35, and 0.46 eV. The defects are attributed to Cs vacancies and Cs and Hg antisite defects. Defect capture cross-sections are in the range 10−20–10−15 cm2.",

keywords = "Cs-based semiconductor, defects, photoconductivity, wide gap semiconductor, γ-ray",

author = "Z. Liu and Peters, {J. A.} and H. Li and Kanatzidis, {M. G.} and J. Im and H. Jin and Freeman, {A. J.} and Wessels, {B. W.}",

note = "Funding Information: This work was supported by DTRA under Grant Number HDTRA1-09-1-0044. Extensive use of the microfabrication facilities of the Materials Research Center at Northwestern University supported by the NSF (No. DMR-1121262) is acknowledged. HL was partially supported by the National Science Foundation (Grant DMR-1410169). Publisher Copyright: {\textcopyright} 2014, The Minerals, Metals & Materials Society.",

year = "2015",

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doi = "10.1007/s11664-014-3372-2",

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AU - Liu, Z.

AU - Peters, J. A.

AU - Li, H.

AU - Kanatzidis, M. G.

AU - Im, J.

AU - Jin, H.

AU - Freeman, A. J.

AU - Wessels, B. W.

N1 - Funding Information: This work was supported by DTRA under Grant Number HDTRA1-09-1-0044. Extensive use of the microfabrication facilities of the Materials Research Center at Northwestern University supported by the NSF (No. DMR-1121262) is acknowledged. HL was partially supported by the National Science Foundation (Grant DMR-1410169). Publisher Copyright: © 2014, The Minerals, Metals & Materials Society.

PY - 2015/1

Y1 - 2015/1

N2 - The ternary compound Cs2Hg6S7 has shown considerable promise as a wide gap semiconductor for hard radiation detection at room temperature. We report on the measurement of defect levels in Cs2Hg6S7 using photo-induced current transient spectroscopy. We observe a series of defect levels with mean activation energies of 0.053, 0.052, 0.34, 0.35, and 0.46 eV. The defects are attributed to Cs vacancies and Cs and Hg antisite defects. Defect capture cross-sections are in the range 10−20–10−15 cm2.

AB - The ternary compound Cs2Hg6S7 has shown considerable promise as a wide gap semiconductor for hard radiation detection at room temperature. We report on the measurement of defect levels in Cs2Hg6S7 using photo-induced current transient spectroscopy. We observe a series of defect levels with mean activation energies of 0.053, 0.052, 0.34, 0.35, and 0.46 eV. The defects are attributed to Cs vacancies and Cs and Hg antisite defects. Defect capture cross-sections are in the range 10−20–10−15 cm2.

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KW - defects

KW - photoconductivity

KW - wide gap semiconductor

KW - γ-ray

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