Photo-Induced Current Transient Spectroscopy of Semi-insulating Single Crystal Cs2Hg6S7

Z. Liu*, J. A. Peters, H. Li, M. G. Kanatzidis, J. Im, H. Jin, A. J. Freeman, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The ternary compound Cs2Hg6S7 has shown considerable promise as a wide gap semiconductor for hard radiation detection at room temperature. We report on the measurement of defect levels in Cs2Hg6S7 using photo-induced current transient spectroscopy. We observe a series of defect levels with mean activation energies of 0.053, 0.052, 0.34, 0.35, and 0.46 eV. The defects are attributed to Cs vacancies and Cs and Hg antisite defects. Defect capture cross-sections are in the range 10−20–10−15 cm2.

Original languageEnglish (US)
Pages (from-to)222-226
Number of pages5
JournalJournal of Electronic Materials
Volume44
Issue number1
DOIs
StatePublished - Jan 1 2015

Keywords

  • Cs-based semiconductor
  • defects
  • photoconductivity
  • wide gap semiconductor
  • γ-ray

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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