Abstract
Indium phosphide photoelectrodes have been studied in situ using electrochemical photocapacitance spectroscopy. The observed photocapacitance spectra were a strong function of electrode surface conditions. The photoionization energies of the chemically induced surface states correlated well with previously reported values determined by surface photovoltage spectroscopy. The chemical treatment of the InP electrode surface with Co and Pt reduced the concentration of deep level interface states near the valence band and introduced a new state at Ev+1.2 eV.
Original language | English (US) |
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Pages (from-to) | 442-444 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 45 |
Issue number | 4 |
DOIs | |
State | Published - 1984 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)