The authors demonstrate the sensitivity of photocapacitance spectroscopy for the study of semiconductor electrode surfaces by applying the technique to p-InP subjected to various surface treatments. In-situ photocapacitance spectroscopy was found to be highly sensitive to the surface condition of indium phosphide photoelectrodes. An excellent correlation between photoionization threshold energies of defect states determined by this technique and previously reported values measured by photovoltage spectroscopy was found. Photocapacitance spectroscopy should have applicability to a wide range of corrosion studies on semiconductor electrodes.
|Original language||English (US)|
|Number of pages||2|
|Journal||Electrochemical Society Extended Abstracts|
|State||Published - Dec 1 1984|
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