We report infrared photoconductors based on InTlSb/InSb grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The photoresponse spectrum extends up to 8 μm at 77 K. The absolute magnitude of the photoresponse is measured as a function of bias. The specific detectivity is estimated to be 3×108 Hz1/2 cm W-1 at 7 μm wavelength.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)