Photoconductance measurements on InTlSb/InSb/GaAs grown by low-pressure metalorganic chemical vapor deposition

P. T. Staveteig; Y. H. Choi; G. Labeyrie; E. Bigan; Manijeh Razeghi

doi:10.1063/1.111129

Photoconductance measurements on InTlSb/InSb/GaAs grown by low-pressure metalorganic chemical vapor deposition

P. T. Staveteig^*, Y. H. Choi, G. Labeyrie, E. Bigan, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

We report infrared photoconductors based on InTlSb/InSb grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The photoresponse spectrum extends up to 8 μm at 77 K. The absolute magnitude of the photoresponse is measured as a function of bias. The specific detectivity is estimated to be 3×10⁸ Hz^1/2 cm W^-1 at 7 μm wavelength.

Original language	English (US)
Pages (from-to)	460-462
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	4
DOIs	https://doi.org/10.1063/1.111129
State	Published - Dec 1 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We report infrared photoconductors based on InTlSb/InSb grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The photoresponse spectrum extends up to 8 μm at 77 K. The absolute magnitude of the photoresponse is measured as a function of bias. The specific detectivity is estimated to be 3×108 Hz1/2 cm W-1 at 7 μm wavelength.",

author = "Staveteig, {P. T.} and Choi, {Y. H.} and G. Labeyrie and E. Bigan and Manijeh Razeghi",

year = "1994",

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AU - Staveteig, P. T.

AU - Choi, Y. H.

AU - Labeyrie, G.

AU - Bigan, E.

AU - Razeghi, Manijeh

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We report infrared photoconductors based on InTlSb/InSb grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The photoresponse spectrum extends up to 8 μm at 77 K. The absolute magnitude of the photoresponse is measured as a function of bias. The specific detectivity is estimated to be 3×108 Hz1/2 cm W-1 at 7 μm wavelength.

AB - We report infrared photoconductors based on InTlSb/InSb grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The photoresponse spectrum extends up to 8 μm at 77 K. The absolute magnitude of the photoresponse is measured as a function of bias. The specific detectivity is estimated to be 3×108 Hz1/2 cm W-1 at 7 μm wavelength.

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Photoconductance measurements on InTlSb/InSb/GaAs grown by low-pressure metalorganic chemical vapor deposition

Abstract

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