Photoconductance measurements on InTlSb/InSb/GaAs grown by low-pressure metalorganic chemical vapor deposition

P. T. Staveteig*, Y. H. Choi, G. Labeyrie, E. Bigan, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

We report infrared photoconductors based on InTlSb/InSb grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The photoresponse spectrum extends up to 8 μm at 77 K. The absolute magnitude of the photoresponse is measured as a function of bias. The specific detectivity is estimated to be 3×108 Hz1/2 cm W-1 at 7 μm wavelength.

Original languageEnglish (US)
Pages (from-to)460-462
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number4
DOIs
StatePublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Photoconductance measurements on InTlSb/InSb/GaAs grown by low-pressure metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this