Photoconductive properties of the Er-doped InP

X. Z. Wang; A. J. Neuhalfen; B. W. Wessels

doi:10.1063/1.111131

Photoconductive properties of the Er-doped InP

X. Z. Wang^*, A. J. Neuhalfen, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The photoconductive properties of Er-doped InP layers prepared by atmospheric pressure metalorganic vapor phase epitaxy were investigated. Two Er³⁺-related photoconductive transitions were observed at 0.807 and 1.27 eV. The 0.807 eV transition involves a 4f-shell intracenter transition. The 1.27 eV transition is attributed to a free to bound transition involving the Er³⁺-related trapping center. Presumably this trapping level is important in the energy transfer process determining the Er³⁺-related emission efficiency in InP. A model is developed to explain the photoconductive response of the Er-doped materials.

Original language	English (US)
Pages (from-to)	466-468
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	4
DOIs	https://doi.org/10.1063/1.111131
State	Published - 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Photoconductive properties of the Er-doped InP",

abstract = "The photoconductive properties of Er-doped InP layers prepared by atmospheric pressure metalorganic vapor phase epitaxy were investigated. Two Er3+-related photoconductive transitions were observed at 0.807 and 1.27 eV. The 0.807 eV transition involves a 4f-shell intracenter transition. The 1.27 eV transition is attributed to a free to bound transition involving the Er3+-related trapping center. Presumably this trapping level is important in the energy transfer process determining the Er3+-related emission efficiency in InP. A model is developed to explain the photoconductive response of the Er-doped materials.",

author = "Wang, {X. Z.} and Neuhalfen, {A. J.} and Wessels, {B. W.}",

year = "1994",

doi = "10.1063/1.111131",

language = "English (US)",

volume = "64",

pages = "466--468",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Photoconductive properties of the Er-doped InP

AU - Wang, X. Z.

AU - Neuhalfen, A. J.

AU - Wessels, B. W.

PY - 1994

Y1 - 1994

N2 - The photoconductive properties of Er-doped InP layers prepared by atmospheric pressure metalorganic vapor phase epitaxy were investigated. Two Er3+-related photoconductive transitions were observed at 0.807 and 1.27 eV. The 0.807 eV transition involves a 4f-shell intracenter transition. The 1.27 eV transition is attributed to a free to bound transition involving the Er3+-related trapping center. Presumably this trapping level is important in the energy transfer process determining the Er3+-related emission efficiency in InP. A model is developed to explain the photoconductive response of the Er-doped materials.

AB - The photoconductive properties of Er-doped InP layers prepared by atmospheric pressure metalorganic vapor phase epitaxy were investigated. Two Er3+-related photoconductive transitions were observed at 0.807 and 1.27 eV. The 0.807 eV transition involves a 4f-shell intracenter transition. The 1.27 eV transition is attributed to a free to bound transition involving the Er3+-related trapping center. Presumably this trapping level is important in the energy transfer process determining the Er3+-related emission efficiency in InP. A model is developed to explain the photoconductive response of the Er-doped materials.

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U2 - 10.1063/1.111131

DO - 10.1063/1.111131

M3 - Article

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VL - 64

SP - 466

EP - 468

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Photoconductive properties of the Er-doped InP

Abstract

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