Photoconductive properties of the Er-doped InP

X. Z. Wang*, A. J. Neuhalfen, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The photoconductive properties of Er-doped InP layers prepared by atmospheric pressure metalorganic vapor phase epitaxy were investigated. Two Er3+-related photoconductive transitions were observed at 0.807 and 1.27 eV. The 0.807 eV transition involves a 4f-shell intracenter transition. The 1.27 eV transition is attributed to a free to bound transition involving the Er3+-related trapping center. Presumably this trapping level is important in the energy transfer process determining the Er3+-related emission efficiency in InP. A model is developed to explain the photoconductive response of the Er-doped materials.

Original languageEnglish (US)
Pages (from-to)466-468
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number4
DOIs
StatePublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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