Photoemission study of Ca1-xSrxF2 films grown by MBE on GaAs(100)

M. A. Engelhardt; H. Höchst; K. Stair; J. Zajac; F. Chambers

doi:10.1088/0031-8949/41/6/040

Photoemission study of Ca_1-xSr_xF₂ films grown by MBE on GaAs(100)

M. A. Engelhardt^*, H. Höchst, K. Stair, J. Zajac, F. Chambers

^*Corresponding author for this work

Materials Science and Engineering

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Abstract

The MBE growth and interface formation of thin Ca_0.43Sr_0.57F₂ films deposited on GaAs(100) has been studied using synchrotron radiation photoemission spectroscopy. Surface sensitive core level spectra and RHEED suggest an extended fluorine-deficient interface for growth at 325°C. Annealing experiments confirm the loss of fluorine at temperatures equal to or greater than 325°C. As 3d spectra did not provide evidence for Ca-As bonds. The fluoride interface formed under these conditions apears to be atomically abrupt but contains a considerable amount of fluorine vacancies. Despite the reduction in interfacial strain by using a lattice matched mixed fluoride of composition Ca_0.43Sr_0.57F₂, RHEED images indicate growth of epitaxial islands.

Original language	English (US)
Pages (from-to)	896-900
Number of pages	5
Journal	Physica Scripta
Volume	41
Issue number	6
DOIs	https://doi.org/10.1088/0031-8949/41/6/040
State	Published - Jun 1 1990

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Mathematical Physics
Condensed Matter Physics

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title = "Photoemission study of Ca1-xSrxF2 films grown by MBE on GaAs(100)",

abstract = "The MBE growth and interface formation of thin Ca0.43Sr0.57F2 films deposited on GaAs(100) has been studied using synchrotron radiation photoemission spectroscopy. Surface sensitive core level spectra and RHEED suggest an extended fluorine-deficient interface for growth at 325°C. Annealing experiments confirm the loss of fluorine at temperatures equal to or greater than 325°C. As 3d spectra did not provide evidence for Ca-As bonds. The fluoride interface formed under these conditions apears to be atomically abrupt but contains a considerable amount of fluorine vacancies. Despite the reduction in interfacial strain by using a lattice matched mixed fluoride of composition Ca0.43Sr0.57F2, RHEED images indicate growth of epitaxial islands.",

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year = "1990",

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T1 - Photoemission study of Ca1-xSrxF2 films grown by MBE on GaAs(100)

AU - Engelhardt, M. A.

AU - Höchst, H.

AU - Stair, K.

AU - Zajac, J.

AU - Chambers, F.

PY - 1990/6/1

Y1 - 1990/6/1

N2 - The MBE growth and interface formation of thin Ca0.43Sr0.57F2 films deposited on GaAs(100) has been studied using synchrotron radiation photoemission spectroscopy. Surface sensitive core level spectra and RHEED suggest an extended fluorine-deficient interface for growth at 325°C. Annealing experiments confirm the loss of fluorine at temperatures equal to or greater than 325°C. As 3d spectra did not provide evidence for Ca-As bonds. The fluoride interface formed under these conditions apears to be atomically abrupt but contains a considerable amount of fluorine vacancies. Despite the reduction in interfacial strain by using a lattice matched mixed fluoride of composition Ca0.43Sr0.57F2, RHEED images indicate growth of epitaxial islands.

AB - The MBE growth and interface formation of thin Ca0.43Sr0.57F2 films deposited on GaAs(100) has been studied using synchrotron radiation photoemission spectroscopy. Surface sensitive core level spectra and RHEED suggest an extended fluorine-deficient interface for growth at 325°C. Annealing experiments confirm the loss of fluorine at temperatures equal to or greater than 325°C. As 3d spectra did not provide evidence for Ca-As bonds. The fluoride interface formed under these conditions apears to be atomically abrupt but contains a considerable amount of fluorine vacancies. Despite the reduction in interfacial strain by using a lattice matched mixed fluoride of composition Ca0.43Sr0.57F2, RHEED images indicate growth of epitaxial islands.

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Photoemission study of Ca_1-xSr_xF₂ films grown by MBE on GaAs(100)

Abstract

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