Photoexcited Carrier Dynamics of In2S3 Thin Films

Robert F. McCarthy, Richard D. Schaller, David J. Gosztola, Gary P. Wiederrecht, Alex B F Martinson*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations


Indium sulfide (In2S3) is a promising absorber base for substitutionally doped intermediate band photovoltaics (IBPV); however, the dynamics of charge carriers traversing the electronic density of states that determine the optical and electronic response of thin films under stimuli have yet to be explored. The kinetics of photophysical processes in In2S3 grown by oxygen-free atomic layer deposition are deduced from photoconductivity, photoluminescence (PL), and transient absorption spectroscopy. We develop a map of excited-state dynamics for polycrystalline thin films including a secondary conduction band ∼2.1 eV above the first, plus sulfur vacancy and indium interstitial defect levels resulting in long-lived (∼100 ns) transients. Band-edge recombination produces PL and stimulated emission, which both intensify and red-shift as deposition temperature and grain size increase. The effect of rapid conduction band electron relaxation (<30 ps) and deep defect levels on IBPV employing In2S3-based absorbers is finally considered.

Original languageEnglish (US)
Pages (from-to)2554-2561
Number of pages8
JournalJournal of Physical Chemistry Letters
Issue number13
StatePublished - Jun 19 2015


  • atomic layer deposition
  • indium(III) sulfide
  • photoluminescence
  • photophysical properties
  • photovoltaics
  • transient absorption spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Physical and Theoretical Chemistry


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