Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn

Sunglae Cho*, Jing Ma, Yunki Kim, Yi Sun, George K.L. Wong, John B Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticle

564 Scopus citations

Abstract

We report a simple method for preparing polycrystalline ZnO thin films with good luminescent properties: the oxidization of metallic Zn films. In photoluminescence (PL) studies at room temperature for wavelengths between 370 and 675 nm, we have observed a single exciton peak around 390 nm without any deep-level emission and a small PL full width at half maximum (23 meV), indicating that the concentrations of the defects responsible for the deep-level emissions are negligible. We have also observed optically pumped lasing action in these films. The threshold intensity for lasing was ∼9 MW/cm 2 .

Original languageEnglish (US)
Pages (from-to)2761-2763
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number18
DOIs
StatePublished - Nov 1 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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