Abstract
We report a simple method for preparing polycrystalline ZnO thin films with good luminescent properties: the oxidization of metallic Zn films. In photoluminescence (PL) studies at room temperature for wavelengths between 370 and 675 nm, we have observed a single exciton peak around 390 nm without any deep-level emission and a small PL full width at half maximum (23 meV), indicating that the concentrations of the defects responsible for the deep-level emissions are negligible. We have also observed optically pumped lasing action in these films. The threshold intensity for lasing was ∼9 MW/cm2.
Original language | English (US) |
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Pages (from-to) | 2761-2763 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 75 |
Issue number | 18 |
DOIs | |
State | Published - Nov 1 1999 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)