Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers

M. A. Reshchikov, F. Shahedipour, R. Y. Korotkov, B. W. Wessels*, M. P. Ulmer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

106 Scopus citations

Abstract

The broad photoluminescence band with a maximum at about 2.9 eV widely observed in undoped epitaxial GaN is studied as a function of temperature and excitation intensity. We attribute the band to transitions from a shallow donor to a deep localized acceptor. The zero-phonon transition for this band is at 3.098 eV as determined from the fine structure at low temperatures. A local vibrational mode in the ground state with an energy of 36 meV is found.

Original languageEnglish (US)
Pages (from-to)3351-3354
Number of pages4
JournalJournal of Applied Physics
Volume87
Issue number7
DOIs
StatePublished - Apr 2000

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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