Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers

M. A. Reshchikov; F. Shahedipour; R. Y. Korotkov; B. W. Wessels; M. P. Ulmer

doi:10.1063/1.372348

Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers

M. A. Reshchikov, F. Shahedipour, R. Y. Korotkov, B. W. Wessels^*, M. P. Ulmer

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

106 Scopus citations

Abstract

The broad photoluminescence band with a maximum at about 2.9 eV widely observed in undoped epitaxial GaN is studied as a function of temperature and excitation intensity. We attribute the band to transitions from a shallow donor to a deep localized acceptor. The zero-phonon transition for this band is at 3.098 eV as determined from the fine structure at low temperatures. A local vibrational mode in the ground state with an energy of 36 meV is found.

Original language	English (US)
Pages (from-to)	3351-3354
Number of pages	4
Journal	Journal of Applied Physics
Volume	87
Issue number	7
DOIs	https://doi.org/10.1063/1.372348
State	Published - Apr 2000

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "The broad photoluminescence band with a maximum at about 2.9 eV widely observed in undoped epitaxial GaN is studied as a function of temperature and excitation intensity. We attribute the band to transitions from a shallow donor to a deep localized acceptor. The zero-phonon transition for this band is at 3.098 eV as determined from the fine structure at low temperatures. A local vibrational mode in the ground state with an energy of 36 meV is found.",

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AU - Shahedipour, F.

AU - Korotkov, R. Y.

AU - Wessels, B. W.

AU - Ulmer, M. P.

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N2 - The broad photoluminescence band with a maximum at about 2.9 eV widely observed in undoped epitaxial GaN is studied as a function of temperature and excitation intensity. We attribute the band to transitions from a shallow donor to a deep localized acceptor. The zero-phonon transition for this band is at 3.098 eV as determined from the fine structure at low temperatures. A local vibrational mode in the ground state with an energy of 36 meV is found.

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