Photoluminescence characteristics of polar and nonpolar AlGaN/GaN superlattices

Z. Vashaei*, C. Bayram, P. Lavenus, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

High quality Al0.2 Ga0.8 N/GaN superlattices (SLs) with various (GaN) well widths (1.6 to 6.4 nm) have been grown on polar c-plane and nonpolar m-plane freestanding GaN substrates by metal-organic chemical vapor deposition. Atomic force microscopy, high resolution x-ray diffraction, and photoluminescence (PL) studies of SLs have been carried out to determine and correlate effects of well width and polarization field on the room-temperature PL characteristics. A theoretical model was applied to explain PL energy-dependency on well width and crystalline orientation taking into account internal electric field for polar substrate. Absence of induced-internal electric field in nonpolar SLs was confirmed by stable PL peak energy and stronger PL intensity as a function of excitation power density than polar ones.

Original languageEnglish (US)
Article number121918
JournalApplied Physics Letters
Volume97
Issue number12
DOIs
StatePublished - Sep 20 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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