@inproceedings{6083d039531a42dfa2aae02af66e289f,
title = "Photoluminescence from doped silicon nanocrystals in SiO2 matrix",
abstract = "The influence of doping on the photoluminescence of a system consisting of silicon nanocrystals in silicon dioxide matrix is analyzed. The nanocrystals were grown by annealing of a silicon dioxide deposited with an excess of silicon and then passivated in a Forming Gas atmosphere. The doping of the nanocrystals with boron and arsenic was made by ion implantation. The composition of the samples was determined by Rutherford Backscattering Spectrometry and a structural characterization of the nanocrystals was done by Transmission Electron Microscopy. The influence of different thermal treatments used to grow and to passivate the nanocrystals is compared and a discussion for the possible explanation for the discrepancy in the results is presented. The highest photoluminescence intensity was achieved by arsenic doped silicon nanocrystals.",
keywords = "doping, photoluminescence, reactive sputtering, silicon nanocrystals",
author = "D. Puglia and G. Sombrio and {dos Reis}, Roberto and H. Boudinov",
year = "2013",
doi = "10.1109/SBMicro.2013.6676145",
language = "English (US)",
isbn = "9781479905188",
series = "Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices",
publisher = "IEEE Computer Society",
booktitle = "Chip in Curitiba 2013 - SBMicro 2013",
address = "United States",
note = "28th Symposium on Microelectronics Technology and Devices, SBMicro 2013 ; Conference date: 02-09-2013 Through 06-09-2013",
}