Photoluminescence linewidth narrowing in Yb-doped GaN and InGaN thin films

K. Dasari, J. Wang, W. M. Jadwisienczak, V. Dierolf, M. Razeghi, R. Palai*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We report on photoluminescence (PL) properties of GaN, GaN:Yb, InGaN, and InGaN:Yb thin films grown on (0001) sapphire substrates by plasma assisted molecular beam epitaxy (MBE). X-ray diffraction pattern of the films confirms c-axis oriented growth. The concentration of Yb and In was obtained by X-ray photoelectron spectroscopy (XPS) and was found to be 5 (± 0.5) at.% and 30 (± 1.5) at.%, respectively. The GaN:Yb and InGaN:Yb thin films show a significant linewidth narrowing in PL spectra compared to GaN and InGaN thin films. This could be attributed to the reduction of the defect related non-radiative recombination paths and suppression of the structural defects and dislocations because of the in situ rare earth (Yb)-doping during the growth. The temperature dependent photoluminescence of GaN:Yb thin film follows the Varshni model, whereas InGaN:Yb film shows a complex S-shaped like behavior, which can be explained by the localization effect using the Band-Tail model.

Original languageEnglish (US)
Pages (from-to)237-243
Number of pages7
JournalJournal of Luminescence
StatePublished - May 2019

ASJC Scopus subject areas

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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