TY - JOUR
T1 - Photoluminescence linewidth narrowing in Yb-doped GaN and InGaN thin films
AU - Dasari, K.
AU - Wang, J.
AU - Jadwisienczak, W. M.
AU - Dierolf, V.
AU - Razeghi, M.
AU - Palai, R.
N1 - Funding Information:
The authors from University of Puerto Rico acknowledge the support received from the National Science Foundation (NSF DMR-1410869). WMJ acknowledges the support by the National Science Foundation CAREER Award (NSF DMR-1056493). RP thanks Dr. R. Martinez, Dept. of Physics, University of Puerto Rico, San Juan, PR for many fruitful discussions.
Funding Information:
The authors from University of Puerto Rico acknowledge the support received from the National Science Foundation ( NSF DMR-1410869 ). WMJ acknowledges the support by the National Science Foundation CAREER Award ( NSF DMR-1056493 ). RP thanks Dr. R. Martinez, Dept. of Physics, University of Puerto Rico, San Juan, PR for many fruitful discussions.
Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2019/5
Y1 - 2019/5
N2 - We report on photoluminescence (PL) properties of GaN, GaN:Yb, InGaN, and InGaN:Yb thin films grown on (0001) sapphire substrates by plasma assisted molecular beam epitaxy (MBE). X-ray diffraction pattern of the films confirms c-axis oriented growth. The concentration of Yb and In was obtained by X-ray photoelectron spectroscopy (XPS) and was found to be 5 (± 0.5) at.% and 30 (± 1.5) at.%, respectively. The GaN:Yb and InGaN:Yb thin films show a significant linewidth narrowing in PL spectra compared to GaN and InGaN thin films. This could be attributed to the reduction of the defect related non-radiative recombination paths and suppression of the structural defects and dislocations because of the in situ rare earth (Yb)-doping during the growth. The temperature dependent photoluminescence of GaN:Yb thin film follows the Varshni model, whereas InGaN:Yb film shows a complex S-shaped like behavior, which can be explained by the localization effect using the Band-Tail model.
AB - We report on photoluminescence (PL) properties of GaN, GaN:Yb, InGaN, and InGaN:Yb thin films grown on (0001) sapphire substrates by plasma assisted molecular beam epitaxy (MBE). X-ray diffraction pattern of the films confirms c-axis oriented growth. The concentration of Yb and In was obtained by X-ray photoelectron spectroscopy (XPS) and was found to be 5 (± 0.5) at.% and 30 (± 1.5) at.%, respectively. The GaN:Yb and InGaN:Yb thin films show a significant linewidth narrowing in PL spectra compared to GaN and InGaN thin films. This could be attributed to the reduction of the defect related non-radiative recombination paths and suppression of the structural defects and dislocations because of the in situ rare earth (Yb)-doping during the growth. The temperature dependent photoluminescence of GaN:Yb thin film follows the Varshni model, whereas InGaN:Yb film shows a complex S-shaped like behavior, which can be explained by the localization effect using the Band-Tail model.
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U2 - 10.1016/j.jlumin.2019.01.012
DO - 10.1016/j.jlumin.2019.01.012
M3 - Article
AN - SCOPUS:85060934590
SN - 0022-2313
VL - 209
SP - 237
EP - 243
JO - Journal of Luminescence
JF - Journal of Luminescence
ER -