Photoluminescence microscopy of InGaN quantum wells

W. D. Herzog*, R. Singh, T. D. Moustakas, B. B. Goldberg, M. S. Ünlü

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaN/InGaN heterojunctions. Room temperature photoluminescence of multiple InGaN quantum wells with GaN barriers fabricated by electron-cyclotron resonance assisted molecular beam epitaxy was measured as a function of position on a facet perpendicular to the layer structure. Our high resolution studies reveal that the radiative recombination for the InGaN quantum wells is 50-60 times more efficient than for the underlying GaN film.

Original languageEnglish (US)
Pages (from-to)1333-1335
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number11
DOIs
StatePublished - Mar 17 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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