Photoluminescence properties of arsenic and boron doped Si3N4 nanocrystal embedded in SiNxOy matrix

Denise Puglia, Guilherme Sombrio, Roberto dos Reis, Henri Boudinov

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Photoluminescence emission of Si3N4 nanocrystals embedded in SiNxOy matrices was investigated. Nanocrystals were grown by annealing of silicon oxynitride films deposited by sputtering, passivated in forming gas atmosphere and implanted with boron and arsenic. Emission energy was tuned from green to ultraviolet by changing the composition of SiNxOy matrices. Structural characterization of the nanocrystals was performed by Transmission Electron Microscopy. Photoluminescence at room and low temperatures was analyzed and the results suggest that light emission originates in the interface between the nanocrystals and the matrix. The highest photoluminescence intensity at room temperature was achieved by arsenic doped silicon oxynitride films deposited with an excess of nitrogen.

Original languageEnglish (US)
Article number036201
JournalMaterials Research Express
Issue number3
StatePublished - Mar 2018


  • Photoluminescence
  • doping
  • nanocrystals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Surfaces, Coatings and Films
  • Polymers and Plastics
  • Metals and Alloys

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