Abstract
The photoluminescent properties of GaN prepared by metal-organic vapor phase epitaxy were studied Strong near band edge luminescence was observed. High resolution photoluminescence spectroscopy indicated three transitions at 3.472, 3.482 and 3.49 eV. The two higher energy transitions are ascribed to free excitons and the lower energy transition to a bound exciton. The photoluminescent properties of samples grown under different conditions were analyzed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 49-54 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 196-201 |
| Issue number | pt 1 |
| State | Published - Dec 1 1995 |
ASJC Scopus subject areas
- Materials Science(all)
