Photoluminescence properties of undoped GaN prepared by atmospheric vapor phase epitaxy

Gyu Chul Yi*, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The photoluminescent properties of GaN prepared by metal-organic vapor phase epitaxy were studied Strong near band edge luminescence was observed. High resolution photoluminescence spectroscopy indicated three transitions at 3.472, 3.482 and 3.49 eV. The two higher energy transitions are ascribed to free excitons and the lower energy transition to a bound exciton. The photoluminescent properties of samples grown under different conditions were analyzed.

Original languageEnglish (US)
Pages (from-to)49-54
Number of pages6
JournalMaterials Science Forum
Volume196-201
Issue numberpt 1
StatePublished - Dec 1 1995

ASJC Scopus subject areas

  • Materials Science(all)

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