Photoluminescence studies of p-type GaN:Mg co-doped with oxygen

R. Y. Korotkov*, J. M. Gregie, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalConference article

5 Scopus citations

Abstract

The low temperature photoluminescence (PL) of Mg-doped GaN co-doped with oxygen is investigated. Two PL bands are observed at low temperature at 2.5 and 2.8 eV in the p-type oxygen co-doped samples. Both the 2.5 eV and 2.8 eV bands are attributed to donor-acceptor (DA) transitions involving deep donors of different origin and a shallow MgGa acceptor. The integrated intensity of the 2.8 eV band in p-type GaN decreases as the oxygen partial pressure is increased. The decrease is attributed to reduced compensation by deep native donors. The two bands are not formed in n-type (n > 1019 cm-3) GaN:Mg over-doped with oxygen indicating that the deep donors responsible for these transitions have high formation energies in n-type material.

Original languageEnglish (US)
JournalMaterials Research Society Symposium - Proceedings
Volume639
StatePublished - Dec 1 2001
EventGaN and Related Alloys 2000 - Boston, MA, United States
Duration: Nov 27 2000Dec 1 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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