Photoluminescence studies of p-type GaN:Mg co-doped with oxygen

R. Y. Korotkov; J. M. Gregie; B. W. Wessels

Photoluminescence studies of p-type GaN:Mg co-doped with oxygen

R. Y. Korotkov^*, J. M. Gregie, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

The low temperature photoluminescence (PL) of Mg-doped GaN co-doped with oxygen is investigated. Two PL bands are observed at low temperature at 2.5 and 2.8 eV in the p-type oxygen co-doped samples. Both the 2.5 eV and 2.8 eV bands are attributed to donor-acceptor (DA) transitions involving deep donors of different origin and a shallow Mg_Ga acceptor. The integrated intensity of the 2.8 eV band in p-type GaN decreases as the oxygen partial pressure is increased. The decrease is attributed to reduced compensation by deep native donors. The two bands are not formed in n-type (n > 10¹⁹ cm^-3) GaN:Mg over-doped with oxygen indicating that the deep donors responsible for these transitions have high formation energies in n-type material.

Original language	English (US)
Pages (from-to)	G6.39.1-G6.39.5
Journal	Materials Research Society Symposium - Proceedings
Volume	639
State	Published - 2001
Event	GaN and Related Alloys 2000 - Boston, MA, United States Duration: Nov 27 2000 → Dec 1 2000

Funding

This work is supported by National Science Foundation GOALI Program, under grant number DMR-9705134 and by an ONR grant # N00014-01-1-0012.

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{bfcf6935ca7c43ba9dd6e5fee0bb220b,

title = "Photoluminescence studies of p-type GaN:Mg co-doped with oxygen",

abstract = "The low temperature photoluminescence (PL) of Mg-doped GaN co-doped with oxygen is investigated. Two PL bands are observed at low temperature at 2.5 and 2.8 eV in the p-type oxygen co-doped samples. Both the 2.5 eV and 2.8 eV bands are attributed to donor-acceptor (DA) transitions involving deep donors of different origin and a shallow MgGa acceptor. The integrated intensity of the 2.8 eV band in p-type GaN decreases as the oxygen partial pressure is increased. The decrease is attributed to reduced compensation by deep native donors. The two bands are not formed in n-type (n > 1019 cm-3) GaN:Mg over-doped with oxygen indicating that the deep donors responsible for these transitions have high formation energies in n-type material.",

author = "Korotkov, {R. Y.} and Gregie, {J. M.} and Wessels, {B. W.}",

note = "Funding Information: This work is supported by National Science Foundation GOALI Program, under grant number DMR-9705134 and by an ONR grant # N00014-01-1-0012.; GaN and Related Alloys 2000 ; Conference date: 27-11-2000 Through 01-12-2000",

year = "2001",

language = "English (US)",

volume = "639",

pages = "G6.39.1--G6.39.5",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Photoluminescence studies of p-type GaN:Mg co-doped with oxygen

AU - Korotkov, R. Y.

AU - Gregie, J. M.

AU - Wessels, B. W.

N1 - Funding Information: This work is supported by National Science Foundation GOALI Program, under grant number DMR-9705134 and by an ONR grant # N00014-01-1-0012.

PY - 2001

Y1 - 2001

N2 - The low temperature photoluminescence (PL) of Mg-doped GaN co-doped with oxygen is investigated. Two PL bands are observed at low temperature at 2.5 and 2.8 eV in the p-type oxygen co-doped samples. Both the 2.5 eV and 2.8 eV bands are attributed to donor-acceptor (DA) transitions involving deep donors of different origin and a shallow MgGa acceptor. The integrated intensity of the 2.8 eV band in p-type GaN decreases as the oxygen partial pressure is increased. The decrease is attributed to reduced compensation by deep native donors. The two bands are not formed in n-type (n > 1019 cm-3) GaN:Mg over-doped with oxygen indicating that the deep donors responsible for these transitions have high formation energies in n-type material.

AB - The low temperature photoluminescence (PL) of Mg-doped GaN co-doped with oxygen is investigated. Two PL bands are observed at low temperature at 2.5 and 2.8 eV in the p-type oxygen co-doped samples. Both the 2.5 eV and 2.8 eV bands are attributed to donor-acceptor (DA) transitions involving deep donors of different origin and a shallow MgGa acceptor. The integrated intensity of the 2.8 eV band in p-type GaN decreases as the oxygen partial pressure is increased. The decrease is attributed to reduced compensation by deep native donors. The two bands are not formed in n-type (n > 1019 cm-3) GaN:Mg over-doped with oxygen indicating that the deep donors responsible for these transitions have high formation energies in n-type material.

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UR - http://www.scopus.com/inward/citedby.url?scp=0035559871&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035559871

SN - 0272-9172

VL - 639

SP - G6.39.1-G6.39.5

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - GaN and Related Alloys 2000

Y2 - 27 November 2000 through 1 December 2000

ER -

Photoluminescence studies of p-type GaN:Mg co-doped with oxygen

Abstract

Funding

ASJC Scopus subject areas

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