Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes

A. Yasan, R. McClintock, K. Mayes, D. H. Kim, P. Kung, M. Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

61 Scopus citations

Abstract

The temperature-dependent photoluminescence (PL) measurements on SQW AlGaN-based UV LEDs with a peak emission at 280 nm was performed. As such, the PL peak energy position showed an S-shaped shift as a function of temperature. From a study of the PL integrated intensity as a function of temperature, two nonradiative recombination processes were found to be involved in the thermal quenching of radiative emission.

Original languageEnglish (US)
Pages (from-to)4083-4085
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number20
DOIs
StatePublished - Nov 17 2003

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes'. Together they form a unique fingerprint.

Cite this