Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic chemical vapor deposition

S. Kim*, M. Erdtmann, D. Wu, E. Kass, H. Yi, J. Diaz, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

Photoluminescence has been measured for double- and separate-confinement InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic vapor deposition. A measurement of the integrated luminescence intensity at the temperature range of 77-300 K shows that over a wide range of excitation level (1-5 × 102 W/cm2) the radiative transitions are the dominant mechanism below T∼170 K. Auger recombination coefficient C = C0 exp(-Ea/kT) with C0≈5 × 10-27 cm6/s and Ea≈40 meV has been estimated.

Original languageEnglish (US)
Pages (from-to)1614-1616
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number11
DOIs
StatePublished - Sep 9 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this