Photoluminescent properties of Er-doped GaP deposited on Si

X. Z. Wang; B. W. Wessels

doi:10.1063/1.115174

Photoluminescent properties of Er-doped GaP deposited on Si

X. Z. Wang^*, B. W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article

11 Scopus citations

Abstract

Er-doped GaP layers were deposited on Si (111) substrates using atmospheric pressure metalorganic vapor phase epitaxy. A strong characteristic Er ³⁺ intra-4f-shell emission at 0.80 eV (1.54 μm) is observed over the temperature range of 12-300 K. The integrated intensity of the 0.80 eV emission is only weakly temperature dependent, decreasing less than 50% as temperature increases from 12 to 300 K. These results indicate that Er-doped GaP thin films deposited on Si are suitable as a material for integrated optoelectronic applications.

Original language	English (US)
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115174
State	Published - Dec 1 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Wang, X. Z., & Wessels, B. W. (1995). Photoluminescent properties of Er-doped GaP deposited on Si. Applied Physics Letters, 67. https://doi.org/10.1063/1.115174

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abstract = "Er-doped GaP layers were deposited on Si (111) substrates using atmospheric pressure metalorganic vapor phase epitaxy. A strong characteristic Er 3+ intra-4f-shell emission at 0.80 eV (1.54 μm) is observed over the temperature range of 12-300 K. The integrated intensity of the 0.80 eV emission is only weakly temperature dependent, decreasing less than 50% as temperature increases from 12 to 300 K. These results indicate that Er-doped GaP thin films deposited on Si are suitable as a material for integrated optoelectronic applications.",

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AU - Wessels, B. W.

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N2 - Er-doped GaP layers were deposited on Si (111) substrates using atmospheric pressure metalorganic vapor phase epitaxy. A strong characteristic Er 3+ intra-4f-shell emission at 0.80 eV (1.54 μm) is observed over the temperature range of 12-300 K. The integrated intensity of the 0.80 eV emission is only weakly temperature dependent, decreasing less than 50% as temperature increases from 12 to 300 K. These results indicate that Er-doped GaP thin films deposited on Si are suitable as a material for integrated optoelectronic applications.

AB - Er-doped GaP layers were deposited on Si (111) substrates using atmospheric pressure metalorganic vapor phase epitaxy. A strong characteristic Er 3+ intra-4f-shell emission at 0.80 eV (1.54 μm) is observed over the temperature range of 12-300 K. The integrated intensity of the 0.80 eV emission is only weakly temperature dependent, decreasing less than 50% as temperature increases from 12 to 300 K. These results indicate that Er-doped GaP thin films deposited on Si are suitable as a material for integrated optoelectronic applications.

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