Photoluminescent properties of Er-doped GaP deposited on Si

X. Z. Wang; B. W. Wessels

doi:10.1063/1.115174

Photoluminescent properties of Er-doped GaP deposited on Si

X. Z. Wang^*, B. W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

Er-doped GaP layers were deposited on Si (111) substrates using atmospheric pressure metalorganic vapor phase epitaxy. A strong characteristic Er ³⁺ intra-4f-shell emission at 0.80 eV (1.54 μm) is observed over the temperature range of 12-300 K. The integrated intensity of the 0.80 eV emission is only weakly temperature dependent, decreasing less than 50% as temperature increases from 12 to 300 K. These results indicate that Er-doped GaP thin films deposited on Si are suitable as a material for integrated optoelectronic applications.

Original language	English (US)
Pages (from-to)	518
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115174
State	Published - 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.115174

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@article{9054d2261bb94e1399dd833e4581c56b,

title = "Photoluminescent properties of Er-doped GaP deposited on Si",

abstract = "Er-doped GaP layers were deposited on Si (111) substrates using atmospheric pressure metalorganic vapor phase epitaxy. A strong characteristic Er 3+ intra-4f-shell emission at 0.80 eV (1.54 μm) is observed over the temperature range of 12-300 K. The integrated intensity of the 0.80 eV emission is only weakly temperature dependent, decreasing less than 50% as temperature increases from 12 to 300 K. These results indicate that Er-doped GaP thin films deposited on Si are suitable as a material for integrated optoelectronic applications.",

author = "Wang, {X. Z.} and Wessels, {B. W.}",

year = "1995",

doi = "10.1063/1.115174",

language = "English (US)",

volume = "67",

pages = "518",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Photoluminescent properties of Er-doped GaP deposited on Si

AU - Wang, X. Z.

AU - Wessels, B. W.

PY - 1995

Y1 - 1995

N2 - Er-doped GaP layers were deposited on Si (111) substrates using atmospheric pressure metalorganic vapor phase epitaxy. A strong characteristic Er 3+ intra-4f-shell emission at 0.80 eV (1.54 μm) is observed over the temperature range of 12-300 K. The integrated intensity of the 0.80 eV emission is only weakly temperature dependent, decreasing less than 50% as temperature increases from 12 to 300 K. These results indicate that Er-doped GaP thin films deposited on Si are suitable as a material for integrated optoelectronic applications.

AB - Er-doped GaP layers were deposited on Si (111) substrates using atmospheric pressure metalorganic vapor phase epitaxy. A strong characteristic Er 3+ intra-4f-shell emission at 0.80 eV (1.54 μm) is observed over the temperature range of 12-300 K. The integrated intensity of the 0.80 eV emission is only weakly temperature dependent, decreasing less than 50% as temperature increases from 12 to 300 K. These results indicate that Er-doped GaP thin films deposited on Si are suitable as a material for integrated optoelectronic applications.

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U2 - 10.1063/1.115174

DO - 10.1063/1.115174

M3 - Article

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SP - 518

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -

Photoluminescent properties of Er-doped GaP deposited on Si

Abstract

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