Photoluminescent properties of Er-doped GaP deposited on Si

X. Z. Wang*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Er-doped GaP layers were deposited on Si (111) substrates using atmospheric pressure metalorganic vapor phase epitaxy. A strong characteristic Er 3+ intra-4f-shell emission at 0.80 eV (1.54 μm) is observed over the temperature range of 12-300 K. The integrated intensity of the 0.80 eV emission is only weakly temperature dependent, decreasing less than 50% as temperature increases from 12 to 300 K. These results indicate that Er-doped GaP thin films deposited on Si are suitable as a material for integrated optoelectronic applications.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - Dec 1 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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