Abstract
Er-doped GaP layers were deposited on Si (111) substrates using atmospheric pressure metalorganic vapor phase epitaxy. A strong characteristic Er 3+ intra-4f-shell emission at 0.80 eV (1.54 μm) is observed over the temperature range of 12-300 K. The integrated intensity of the 0.80 eV emission is only weakly temperature dependent, decreasing less than 50% as temperature increases from 12 to 300 K. These results indicate that Er-doped GaP thin films deposited on Si are suitable as a material for integrated optoelectronic applications.
Original language | English (US) |
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Pages (from-to) | 518 |
Number of pages | 1 |
Journal | Applied Physics Letters |
Volume | 67 |
DOIs | |
State | Published - 1995 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)