Photoluminescent properties of Er-doped In1-xGaxP prepared by metalorganic vapor phase epitaxy

A. J. Neuhalfen*, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalArticle

29 Scopus citations

Abstract

Atmospheric pressure metalorganic vapor phase epitaxy has been used to prepare Er-doped In1-xGaxP layers using an Er beta-diketonate precursor as the dopant source. Temperature-dependent photoluminescent properties were studied as a function of alloy composition for x=0-0.98. All the Er-doped In1-xGaxP layers exhibited strong characteristic Er3+ intra-4f-shell photoluminescent emission at 0.801 eV which was independent of the alloy composition. A thermal quenching of the Er3+-related emission was observed and depended on the alloy composition. For In1-xGaxP alloys with x>0.2, Er 3+-related luminescence is observed at 295 K.

Original languageEnglish (US)
Pages (from-to)2317-2319
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number18
DOIs
StatePublished - Dec 1 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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