Photoluminescent properties of Er-doped In1-xGaxP prepared by metalorganic vapor phase epitaxy

A. J. Neuhalfen; B. W. Wessels

doi:10.1063/1.106055

Photoluminescent properties of Er-doped In_1-xGa_xP prepared by metalorganic vapor phase epitaxy

A. J. Neuhalfen^*, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

Atmospheric pressure metalorganic vapor phase epitaxy has been used to prepare Er-doped In_1-xGa_xP layers using an Er beta-diketonate precursor as the dopant source. Temperature-dependent photoluminescent properties were studied as a function of alloy composition for x=0-0.98. All the Er-doped In_1-xGa_xP layers exhibited strong characteristic Er³⁺ intra-4f-shell photoluminescent emission at 0.801 eV which was independent of the alloy composition. A thermal quenching of the Er³⁺-related emission was observed and depended on the alloy composition. For In_1-xGa_xP alloys with x>0.2, Er ³⁺-related luminescence is observed at 295 K.

Original language	English (US)
Pages (from-to)	2317-2319
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	18
DOIs	https://doi.org/10.1063/1.106055
State	Published - 1991

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Physics and Astronomy (miscellaneous)

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title = "Photoluminescent properties of Er-doped In1-xGaxP prepared by metalorganic vapor phase epitaxy",

abstract = "Atmospheric pressure metalorganic vapor phase epitaxy has been used to prepare Er-doped In1-xGaxP layers using an Er beta-diketonate precursor as the dopant source. Temperature-dependent photoluminescent properties were studied as a function of alloy composition for x=0-0.98. All the Er-doped In1-xGaxP layers exhibited strong characteristic Er3+ intra-4f-shell photoluminescent emission at 0.801 eV which was independent of the alloy composition. A thermal quenching of the Er3+-related emission was observed and depended on the alloy composition. For In1-xGaxP alloys with x>0.2, Er 3+-related luminescence is observed at 295 K.",

author = "Neuhalfen, {A. J.} and Wessels, {B. W.}",

year = "1991",

doi = "10.1063/1.106055",

language = "English (US)",

volume = "59",

pages = "2317--2319",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Photoluminescent properties of Er-doped In1-xGaxP prepared by metalorganic vapor phase epitaxy

AU - Neuhalfen, A. J.

AU - Wessels, B. W.

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N2 - Atmospheric pressure metalorganic vapor phase epitaxy has been used to prepare Er-doped In1-xGaxP layers using an Er beta-diketonate precursor as the dopant source. Temperature-dependent photoluminescent properties were studied as a function of alloy composition for x=0-0.98. All the Er-doped In1-xGaxP layers exhibited strong characteristic Er3+ intra-4f-shell photoluminescent emission at 0.801 eV which was independent of the alloy composition. A thermal quenching of the Er3+-related emission was observed and depended on the alloy composition. For In1-xGaxP alloys with x>0.2, Er 3+-related luminescence is observed at 295 K.

AB - Atmospheric pressure metalorganic vapor phase epitaxy has been used to prepare Er-doped In1-xGaxP layers using an Er beta-diketonate precursor as the dopant source. Temperature-dependent photoluminescent properties were studied as a function of alloy composition for x=0-0.98. All the Er-doped In1-xGaxP layers exhibited strong characteristic Er3+ intra-4f-shell photoluminescent emission at 0.801 eV which was independent of the alloy composition. A thermal quenching of the Er3+-related emission was observed and depended on the alloy composition. For In1-xGaxP alloys with x>0.2, Er 3+-related luminescence is observed at 295 K.

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Photoluminescent properties of Er-doped In_1-xGa_xP prepared by metalorganic vapor phase epitaxy

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