TY - JOUR
T1 - Photoluminescent properties of semiconducting Tl 6I 4Se
AU - Cho, N. K.
AU - Peters, J. A.
AU - Liu, Zhifu
AU - Wessels, Bruce W
AU - Johnsen, S.
AU - Kanatzidis, Mercouri
AU - Song, J. H.
AU - Jin, H.
AU - Freeman, Arthur J
PY - 2012/1/1
Y1 - 2012/1/1
N2 - The photoluminescence (PL) from the wide bandgap semiconductor Tl 6I 4Se, a promising candidate material for gamma ray detection, was studied at low temperature. The Tl 6I 4Se single crystal was grown by the Bridgman method. For undoped material, we observed a single broad peak at 1.61 eV with a full width at half maximum of 112 meV at 20 K, which is attributed to donoracceptor pair (DAP) recombination involving shallow donors and deep acceptors. From the thermal quenching of the integrated PL peak intensity, thermal activation energy of the donor level of 52 meV was obtained. At high excitation intensities a blue-shift of peak emission energy in DAP recombination was observed. From the PL measurements, the ionization energies of the donor and acceptor levels were estimated at 52 and 290 meV, respectively.
AB - The photoluminescence (PL) from the wide bandgap semiconductor Tl 6I 4Se, a promising candidate material for gamma ray detection, was studied at low temperature. The Tl 6I 4Se single crystal was grown by the Bridgman method. For undoped material, we observed a single broad peak at 1.61 eV with a full width at half maximum of 112 meV at 20 K, which is attributed to donoracceptor pair (DAP) recombination involving shallow donors and deep acceptors. From the thermal quenching of the integrated PL peak intensity, thermal activation energy of the donor level of 52 meV was obtained. At high excitation intensities a blue-shift of peak emission energy in DAP recombination was observed. From the PL measurements, the ionization energies of the donor and acceptor levels were estimated at 52 and 290 meV, respectively.
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U2 - 10.1088/0268-1242/27/1/015016
DO - 10.1088/0268-1242/27/1/015016
M3 - Article
AN - SCOPUS:84855369632
VL - 27
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 1
M1 - 015016
ER -