Photoluminescent properties of semiconducting Tl 6I 4Se

N. K. Cho; J. A. Peters; Zhifu Liu; Bruce W Wessels; S. Johnsen; Mercouri Kanatzidis; J. H. Song; H. Jin; Arthur J Freeman

doi:10.1088/0268-1242/27/1/015016

Photoluminescent properties of semiconducting Tl ₆I ₄Se

N. K. Cho^*, J. A. Peters, Zhifu Liu, Bruce W Wessels, S. Johnsen, Mercouri Kanatzidis, J. H. Song, H. Jin, Arthur J Freeman

^*Corresponding author for this work

Research output: Contribution to journal › Article

9 Scopus citations

Abstract

The photoluminescence (PL) from the wide bandgap semiconductor Tl ₆I ₄Se, a promising candidate material for gamma ray detection, was studied at low temperature. The Tl ₆I ₄Se single crystal was grown by the Bridgman method. For undoped material, we observed a single broad peak at 1.61 eV with a full width at half maximum of 112 meV at 20 K, which is attributed to donoracceptor pair (DAP) recombination involving shallow donors and deep acceptors. From the thermal quenching of the integrated PL peak intensity, thermal activation energy of the donor level of 52 meV was obtained. At high excitation intensities a blue-shift of peak emission energy in DAP recombination was observed. From the PL measurements, the ionization energies of the donor and acceptor levels were estimated at 52 and 290 meV, respectively.

Original language	English (US)
Article number	015016
Journal	Semiconductor Science and Technology
Volume	27
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/27/1/015016
State	Published - Jan 1 2012

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Cho, N. K., Peters, J. A., Liu, Z., Wessels, B. W., Johnsen, S., Kanatzidis, M., Song, J. H., Jin, H., & Freeman, A. J. (2012). Photoluminescent properties of semiconducting Tl ₆I ₄Se. Semiconductor Science and Technology, 27(1), [015016]. https://doi.org/10.1088/0268-1242/27/1/015016

@article{ec3dca05a52f4c47b959d212602e6c4b,

title = "Photoluminescent properties of semiconducting Tl 6I 4Se",

abstract = "The photoluminescence (PL) from the wide bandgap semiconductor Tl 6I 4Se, a promising candidate material for gamma ray detection, was studied at low temperature. The Tl 6I 4Se single crystal was grown by the Bridgman method. For undoped material, we observed a single broad peak at 1.61 eV with a full width at half maximum of 112 meV at 20 K, which is attributed to donoracceptor pair (DAP) recombination involving shallow donors and deep acceptors. From the thermal quenching of the integrated PL peak intensity, thermal activation energy of the donor level of 52 meV was obtained. At high excitation intensities a blue-shift of peak emission energy in DAP recombination was observed. From the PL measurements, the ionization energies of the donor and acceptor levels were estimated at 52 and 290 meV, respectively.",

author = "Cho, {N. K.} and Peters, {J. A.} and Zhifu Liu and Wessels, {Bruce W} and S. Johnsen and Mercouri Kanatzidis and Song, {J. H.} and H. Jin and Freeman, {Arthur J}",

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doi = "10.1088/0268-1242/27/1/015016",

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T1 - Photoluminescent properties of semiconducting Tl 6I 4Se

AU - Cho, N. K.

AU - Peters, J. A.

AU - Liu, Zhifu

AU - Wessels, Bruce W

AU - Johnsen, S.

AU - Kanatzidis, Mercouri

AU - Song, J. H.

AU - Jin, H.

AU - Freeman, Arthur J

PY - 2012/1/1

Y1 - 2012/1/1

N2 - The photoluminescence (PL) from the wide bandgap semiconductor Tl 6I 4Se, a promising candidate material for gamma ray detection, was studied at low temperature. The Tl 6I 4Se single crystal was grown by the Bridgman method. For undoped material, we observed a single broad peak at 1.61 eV with a full width at half maximum of 112 meV at 20 K, which is attributed to donoracceptor pair (DAP) recombination involving shallow donors and deep acceptors. From the thermal quenching of the integrated PL peak intensity, thermal activation energy of the donor level of 52 meV was obtained. At high excitation intensities a blue-shift of peak emission energy in DAP recombination was observed. From the PL measurements, the ionization energies of the donor and acceptor levels were estimated at 52 and 290 meV, respectively.

AB - The photoluminescence (PL) from the wide bandgap semiconductor Tl 6I 4Se, a promising candidate material for gamma ray detection, was studied at low temperature. The Tl 6I 4Se single crystal was grown by the Bridgman method. For undoped material, we observed a single broad peak at 1.61 eV with a full width at half maximum of 112 meV at 20 K, which is attributed to donoracceptor pair (DAP) recombination involving shallow donors and deep acceptors. From the thermal quenching of the integrated PL peak intensity, thermal activation energy of the donor level of 52 meV was obtained. At high excitation intensities a blue-shift of peak emission energy in DAP recombination was observed. From the PL measurements, the ionization energies of the donor and acceptor levels were estimated at 52 and 290 meV, respectively.

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