Abstract
Owing to their ability to generate non-classical light states, quantum dots (QDs) are ideal candidates for the large-scale deployment of quantum information technologies. However, semiconductor QDs alone lack the high photon collection efficiency needed by these technologies. In this work we present a laser writing technique for the fabrication of QDs self-aligned with dielectric microspheres, which, in turn, increase the collection efficiency of the system of a factor 7.3 ± 0.7. That technique exploits the use of photonic nanojets, produced by illuminating the microspheres, to selectively break the N-H bond in a GaAs/GaAs1−xNx:H/GaAs quantum well, thus fabricating GaAs1−xNx QDs.
| Original language | English (US) |
|---|---|
| Article number | 179 |
| Journal | Nuovo Cimento della Societa Italiana di Fisica C |
| Volume | 45 |
| Issue number | 6 |
| DOIs | |
| State | Published - Nov 2022 |
Funding
FB acknowledges Fondazione Cassa di Risparmio di Firenze for funding this work within the projects SFERIQA 2020.1511, Photonic Future 2021.1508 and PUPO project (co-funded by the University of Florence and the Italian Ministry of University and Research). Research at Northwestern University (TH and HM) was partially supported by ARO award no. W911NF-11-1-0390. The authors warmly thank Prof. Mark Hopkinson, University of Sheffield (UK), for having provided the GaAs1−xNx/GaAs quantum well, and Nicoletta Granchi, University of Florence (Italy), for having provided the SNOM tip used to remove the microspheres.
ASJC Scopus subject areas
- Astronomy and Astrophysics
- Physics and Astronomy (miscellaneous)