TY - JOUR
T1 - Photonic jets writing of quantum dots with intrinsic photoluminescence collection enhancement(∗)
AU - Ristori, A.
AU - Hamilton, T.
AU - Felici, M.
AU - Pettinari, G.
AU - Gurioli, M.
AU - Mohseni, H.
AU - Biccari, F.
N1 - Funding Information:
FB acknowledges Fondazione Cassa di Risparmio di Firenze for funding this work within the projects SFERIQA 2020.1511, Photonic Future 2021.1508 and PUPO project (co-funded by the University of Florence and the Italian Ministry of University and Research). Research at Northwestern University (TH and HM) was partially supported by ARO award no. W911NF-11-1-0390. The authors warmly thank Prof. Mark Hopkinson, University of Sheffield (UK), for having provided the GaAs1−xNx/GaAs quantum well, and Nicoletta Granchi, University of Florence (Italy), for having provided the SNOM tip used to remove the microspheres.
Publisher Copyright:
© 2022 Societa Italiana di Fisica. All rights reserved.
PY - 2022/11
Y1 - 2022/11
N2 - Owing to their ability to generate non-classical light states, quantum dots (QDs) are ideal candidates for the large-scale deployment of quantum information technologies. However, semiconductor QDs alone lack the high photon collection efficiency needed by these technologies. In this work we present a laser writing technique for the fabrication of QDs self-aligned with dielectric microspheres, which, in turn, increase the collection efficiency of the system of a factor 7.3 ± 0.7. That technique exploits the use of photonic nanojets, produced by illuminating the microspheres, to selectively break the N-H bond in a GaAs/GaAs1−xNx:H/GaAs quantum well, thus fabricating GaAs1−xNx QDs.
AB - Owing to their ability to generate non-classical light states, quantum dots (QDs) are ideal candidates for the large-scale deployment of quantum information technologies. However, semiconductor QDs alone lack the high photon collection efficiency needed by these technologies. In this work we present a laser writing technique for the fabrication of QDs self-aligned with dielectric microspheres, which, in turn, increase the collection efficiency of the system of a factor 7.3 ± 0.7. That technique exploits the use of photonic nanojets, produced by illuminating the microspheres, to selectively break the N-H bond in a GaAs/GaAs1−xNx:H/GaAs quantum well, thus fabricating GaAs1−xNx QDs.
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U2 - 10.1393/ncc/i2022-22179-3
DO - 10.1393/ncc/i2022-22179-3
M3 - Article
AN - SCOPUS:85148534209
SN - 1124-1896
VL - 45
JO - Nuovo Cimento della Societa Italiana di Fisica C
JF - Nuovo Cimento della Societa Italiana di Fisica C
IS - 6
M1 - 179
ER -