Abstract
Absorption in p-doped quantum well infrared photodetectors (QWIP's) based on InGaAsP alloys is measured and theoretically explained. It is noticed that the small spin-orbit splitting in InGaAsP alloys considerably affects the absorption spectrum. Very good agreement between the experimental and theoretical results is obtained, in respect of both the position of the peak of the responsivity and the cut-off wavelength. The experimental data displays the absorption in the 3-5 μm window, while the calculation predicts two peaks, for one of them the split-off band being responsible.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of the International Conference on Microelectronics |
| Editors | Anon |
| Publisher | IEEE |
| Pages | 315-318 |
| Number of pages | 4 |
| Volume | 1 |
| State | Published - Dec 1 1997 |
| Event | Proceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 1 (of 2) - Nis, Yugosl Duration: Sep 14 1997 → Sep 17 1997 |
Other
| Other | Proceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 1 (of 2) |
|---|---|
| City | Nis, Yugosl |
| Period | 9/14/97 → 9/17/97 |
ASJC Scopus subject areas
- General Engineering