Photoresponse of InGaAsP-based p-doped quantum well infrared photodetectors

Milan Tadic*, Christopher Jelen, Steven Slivken, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Absorption in p-doped quantum well infrared photodetectors (QWIP's) based on InGaAsP alloys is measured and theoretically explained. It is noticed that the small spin-orbit splitting in InGaAsP alloys considerably affects the absorption spectrum. Very good agreement between the experimental and theoretical results is obtained, in respect of both the position of the peak of the responsivity and the cut-off wavelength. The experimental data displays the absorption in the 3-5 μm window, while the calculation predicts two peaks, for one of them the split-off band being responsible.

Original languageEnglish (US)
Title of host publicationProceedings of the International Conference on Microelectronics
Editors Anon
PublisherIEEE
Pages315-318
Number of pages4
Volume1
StatePublished - Dec 1 1997
EventProceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 1 (of 2) - Nis, Yugosl
Duration: Sep 14 1997Sep 17 1997

Other

OtherProceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 1 (of 2)
CityNis, Yugosl
Period9/14/979/17/97

ASJC Scopus subject areas

  • Engineering(all)

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