Photosensing properties of pentacene OFETs based on a novel PMMA copolymer gate dielectric

Fausta Loffredo; Immacolata Angelica Grimaldi; Riccardo Miscioscia; Giuseppe Nenna; Fulvia Villani; Carla Minarini; Mario Petrosino; Alfredo Rubino; Hakan Usta; Antonio Facchetti

doi:10.1109/JDT.2014.2363685

Photosensing properties of pentacene OFETs based on a novel PMMA copolymer gate dielectric

Fausta Loffredo, Immacolata Angelica Grimaldi, Riccardo Miscioscia, Giuseppe Nenna, Fulvia Villani, Carla Minarini, Mario Petrosino, Alfredo Rubino, Hakan Usta, Antonio Facchetti

Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

In the present work, bottom-gate top-contact organic field effect transistors (OFETs) were fabricated by evaporating a pentacene semiconductor film on top of a new insulating poly(methyl methacrylate) (PMMA) copolymer containing methacrylate units. The PMMA copolymer was synthesized in order to combine the well-known insulating properties of PMMA with the possibility to be efficiently photocured enabling photopatterning-based organic circuitry integration processes. The properties of the pentacene layer deposited on ITO/PMMA copolymer stack were studied through morphological and structural analyses. Device photoresponses and photoexcitated transients were investigated and compared to reference devices based on standard PMMA gate dielectric.

Original language	English (US)
Article number	6928475
Pages (from-to)	533-540
Number of pages	8
Journal	IEEE/OSA Journal of Display Technology
Volume	11
Issue number	6
DOIs	https://doi.org/10.1109/JDT.2014.2363685
State	Published - Jun 1 2015

Keywords

pentacene
Photocurable gate dielectric
photoresponse
phototransistor
PMMA copolymer

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/JDT.2014.2363685

Cite this

@article{d8a9b7e241a0473fa2626bada2ce58ef,

title = "Photosensing properties of pentacene OFETs based on a novel PMMA copolymer gate dielectric",

abstract = "In the present work, bottom-gate top-contact organic field effect transistors (OFETs) were fabricated by evaporating a pentacene semiconductor film on top of a new insulating poly(methyl methacrylate) (PMMA) copolymer containing methacrylate units. The PMMA copolymer was synthesized in order to combine the well-known insulating properties of PMMA with the possibility to be efficiently photocured enabling photopatterning-based organic circuitry integration processes. The properties of the pentacene layer deposited on ITO/PMMA copolymer stack were studied through morphological and structural analyses. Device photoresponses and photoexcitated transients were investigated and compared to reference devices based on standard PMMA gate dielectric.",

keywords = "pentacene, Photocurable gate dielectric, photoresponse, phototransistor, PMMA copolymer",

author = "Fausta Loffredo and Grimaldi, {Immacolata Angelica} and Riccardo Miscioscia and Giuseppe Nenna and Fulvia Villani and Carla Minarini and Mario Petrosino and Alfredo Rubino and Hakan Usta and Antonio Facchetti",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

month = jun,

day = "1",

doi = "10.1109/JDT.2014.2363685",

language = "English (US)",

volume = "11",

pages = "533--540",

journal = "IEEE/OSA Journal of Display Technology",

issn = "1551-319X",

publisher = "IEEE Computer Society",

number = "6",

}

TY - JOUR

T1 - Photosensing properties of pentacene OFETs based on a novel PMMA copolymer gate dielectric

AU - Loffredo, Fausta

AU - Grimaldi, Immacolata Angelica

AU - Miscioscia, Riccardo

AU - Nenna, Giuseppe

AU - Villani, Fulvia

AU - Minarini, Carla

AU - Petrosino, Mario

AU - Rubino, Alfredo

AU - Usta, Hakan

AU - Facchetti, Antonio

PY - 2015/6/1

Y1 - 2015/6/1

N2 - In the present work, bottom-gate top-contact organic field effect transistors (OFETs) were fabricated by evaporating a pentacene semiconductor film on top of a new insulating poly(methyl methacrylate) (PMMA) copolymer containing methacrylate units. The PMMA copolymer was synthesized in order to combine the well-known insulating properties of PMMA with the possibility to be efficiently photocured enabling photopatterning-based organic circuitry integration processes. The properties of the pentacene layer deposited on ITO/PMMA copolymer stack were studied through morphological and structural analyses. Device photoresponses and photoexcitated transients were investigated and compared to reference devices based on standard PMMA gate dielectric.

AB - In the present work, bottom-gate top-contact organic field effect transistors (OFETs) were fabricated by evaporating a pentacene semiconductor film on top of a new insulating poly(methyl methacrylate) (PMMA) copolymer containing methacrylate units. The PMMA copolymer was synthesized in order to combine the well-known insulating properties of PMMA with the possibility to be efficiently photocured enabling photopatterning-based organic circuitry integration processes. The properties of the pentacene layer deposited on ITO/PMMA copolymer stack were studied through morphological and structural analyses. Device photoresponses and photoexcitated transients were investigated and compared to reference devices based on standard PMMA gate dielectric.

KW - pentacene

KW - Photocurable gate dielectric

KW - photoresponse

KW - phototransistor

KW - PMMA copolymer

UR - http://www.scopus.com/inward/record.url?scp=84929322265&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84929322265&partnerID=8YFLogxK

U2 - 10.1109/JDT.2014.2363685

DO - 10.1109/JDT.2014.2363685

M3 - Article

AN - SCOPUS:84929322265

SN - 1551-319X

VL - 11

SP - 533

EP - 540

JO - IEEE/OSA Journal of Display Technology

JF - IEEE/OSA Journal of Display Technology

IS - 6

M1 - 6928475

ER -

Photosensing properties of pentacene OFETs based on a novel PMMA copolymer gate dielectric

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this