Photosensing properties of pentacene OFETs based on a novel PMMA copolymer gate dielectric

Fausta Loffredo, Immacolata Angelica Grimaldi, Riccardo Miscioscia, Giuseppe Nenna, Fulvia Villani, Carla Minarini, Mario Petrosino, Alfredo Rubino, Hakan Usta, Antonio Facchetti

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


In the present work, bottom-gate top-contact organic field effect transistors (OFETs) were fabricated by evaporating a pentacene semiconductor film on top of a new insulating poly(methyl methacrylate) (PMMA) copolymer containing methacrylate units. The PMMA copolymer was synthesized in order to combine the well-known insulating properties of PMMA with the possibility to be efficiently photocured enabling photopatterning-based organic circuitry integration processes. The properties of the pentacene layer deposited on ITO/PMMA copolymer stack were studied through morphological and structural analyses. Device photoresponses and photoexcitated transients were investigated and compared to reference devices based on standard PMMA gate dielectric.

Original languageEnglish (US)
Article number6928475
Pages (from-to)533-540
Number of pages8
JournalIEEE/OSA Journal of Display Technology
Issue number6
StatePublished - Jun 1 2015


  • pentacene
  • Photocurable gate dielectric
  • photoresponse
  • phototransistor
  • PMMA copolymer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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