Photovoltaic effects in GaN structures with p-n junctions

X. Zhang*, P. Kung, D. Walker, J. Piotrowski, A. Rogalski, A. Saxler, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

Large-area GaN photovoltaic structures with p-n junctions have been fabricated using atmospheric pressure metalorganic chemical vapor deposition. The photovoltaic devices typically exhibit selective spectral characteristics with two narrow peaks of opposite polarity. This can be related to p-n junction connected back-to-back with a Schottky barrier. The shape of the spectral characteristic is dependent on the thickness of the n- and p-type regions. The diffusion length of holes in the n-type GaN region, estimated by theoretical modeling of the spectral response shape, was about 0.1 μm.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - Dec 1 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Zhang, X., Kung, P., Walker, D., Piotrowski, J., Rogalski, A., Saxler, A., & Razeghi, M. (1995). Photovoltaic effects in GaN structures with p-n junctions. Applied Physics Letters, 67. https://doi.org/10.1063/1.114776