Photovoltaic effects in GaN structures with p-n junctions

X. Zhang; P. Kung; D. Walker; J. Piotrowski; A. Rogalski; A. Saxler; M. Razeghi

doi:10.1063/1.114776

Photovoltaic effects in GaN structures with p-n junctions

X. Zhang^*, P. Kung, D. Walker, J. Piotrowski, A. Rogalski, A. Saxler, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

100 Scopus citations

Abstract

Large-area GaN photovoltaic structures with p-n junctions have been fabricated using atmospheric pressure metalorganic chemical vapor deposition. The photovoltaic devices typically exhibit selective spectral characteristics with two narrow peaks of opposite polarity. This can be related to p-n junction connected back-to-back with a Schottky barrier. The shape of the spectral characteristic is dependent on the thickness of the n- and p-type regions. The diffusion length of holes in the n-type GaN region, estimated by theoretical modeling of the spectral response shape, was about 0.1 μm.

Original language	English (US)
Pages (from-to)	2028
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.114776
State	Published - 1995

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Physics and Astronomy (miscellaneous)

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title = "Photovoltaic effects in GaN structures with p-n junctions",

abstract = "Large-area GaN photovoltaic structures with p-n junctions have been fabricated using atmospheric pressure metalorganic chemical vapor deposition. The photovoltaic devices typically exhibit selective spectral characteristics with two narrow peaks of opposite polarity. This can be related to p-n junction connected back-to-back with a Schottky barrier. The shape of the spectral characteristic is dependent on the thickness of the n- and p-type regions. The diffusion length of holes in the n-type GaN region, estimated by theoretical modeling of the spectral response shape, was about 0.1 μm.",

author = "X. Zhang and P. Kung and D. Walker and J. Piotrowski and A. Rogalski and A. Saxler and M. Razeghi",

year = "1995",

doi = "10.1063/1.114776",

language = "English (US)",

volume = "67",

pages = "2028",

journal = "Applied Physics Letters",

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T1 - Photovoltaic effects in GaN structures with p-n junctions

AU - Zhang, X.

AU - Kung, P.

AU - Walker, D.

AU - Piotrowski, J.

AU - Rogalski, A.

AU - Saxler, A.

AU - Razeghi, M.

PY - 1995

Y1 - 1995

N2 - Large-area GaN photovoltaic structures with p-n junctions have been fabricated using atmospheric pressure metalorganic chemical vapor deposition. The photovoltaic devices typically exhibit selective spectral characteristics with two narrow peaks of opposite polarity. This can be related to p-n junction connected back-to-back with a Schottky barrier. The shape of the spectral characteristic is dependent on the thickness of the n- and p-type regions. The diffusion length of holes in the n-type GaN region, estimated by theoretical modeling of the spectral response shape, was about 0.1 μm.

AB - Large-area GaN photovoltaic structures with p-n junctions have been fabricated using atmospheric pressure metalorganic chemical vapor deposition. The photovoltaic devices typically exhibit selective spectral characteristics with two narrow peaks of opposite polarity. This can be related to p-n junction connected back-to-back with a Schottky barrier. The shape of the spectral characteristic is dependent on the thickness of the n- and p-type regions. The diffusion length of holes in the n-type GaN region, estimated by theoretical modeling of the spectral response shape, was about 0.1 μm.

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JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Photovoltaic effects in GaN structures with p-n junctions

Abstract

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