Photovoltaic MWIR type-II superlattice focal plane array on GaAs substrate

Edward Kwei Wei Huang, Pierre Yves Delaunay, Binh Minh Nguyen, Siamak Abdollahi Pour, Manijeh Razeghi

Research output: Contribution to journalArticle

28 Scopus citations

Abstract

Recent improvements in the performance of type-II superlattice (T2SL) photodetectors has spurred interest in developing low-cost and large-format focal plane arrays (FPAs) on this material system. Due to the limitations of size and cost of native GaSb substrates, GaAs is an attractive alternative with 8 in wafers commercially available, but is 7.8% lattice mismatched to T2SL. In this paper, we present a photovoltaic T2SL 320 x 256 FPA in the mid-wavelength infrared on GaAs substrate. The FPA attained a median noise equivalent temperature difference of 13 and 10 mK (F# = 2.3) with integration times of 10.02 and 19.06 ms, respectively, at 67 K.

Original languageEnglish (US)
Article number5638301
Pages (from-to)1704-1708
Number of pages5
JournalIEEE Journal of Quantum Electronics
Volume46
Issue number12
DOIs
StatePublished - Nov 29 2010

Keywords

  • Alternative substrate
  • GaAs infrared
  • focal plane array
  • mid-wavelength infrared
  • photodetectors
  • type-II superlattice

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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