Photovoltaic properties of ZnSe{plus 45 degree rule}GaAs heterojunctions

Paul Besomi; Keith Christianson; Bruce W. Wessels

doi:10.1016/0040-6090(82)90265-6

Photovoltaic properties of ZnSe{plus 45 degree rule}GaAs heterojunctions

Paul Besomi^*, Keith Christianson, Bruce W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

ZnSe{plus 45 degree rule}GaAs heterojunction photovoltaic devices were prepared by epitaxial growth of high conductivity ZnSe on p-type GaAs using chemical vapor transport. The heterojunctions had a uniform spectral response for energies between 1.6 and 2.6 eV. For simulated solar radiation, power conversion efficiencies of 7% were measured on cells without antireflection coatings. The solar conversion efficiencies were found to be strongly influenced by the ZnSe thin film preparation conditions.

Original language	English (US)
Pages (from-to)	113-118
Number of pages	6
Journal	Thin Solid Films
Volume	87
Issue number	2
DOIs	https://doi.org/10.1016/0040-6090(82)90265-6
State	Published - Jan 15 1982

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Photovoltaic properties of ZnSe{plus 45 degree rule}GaAs heterojunctions",

abstract = "ZnSe{plus 45 degree rule}GaAs heterojunction photovoltaic devices were prepared by epitaxial growth of high conductivity ZnSe on p-type GaAs using chemical vapor transport. The heterojunctions had a uniform spectral response for energies between 1.6 and 2.6 eV. For simulated solar radiation, power conversion efficiencies of 7% were measured on cells without antireflection coatings. The solar conversion efficiencies were found to be strongly influenced by the ZnSe thin film preparation conditions.",

author = "Paul Besomi and Keith Christianson and Wessels, {Bruce W.}",

note = "Funding Information: Energy Sciences, Department of Energy, under Contract DE-AC02-79ER10390. The heterojunction spectral response was measured in the Optical Measurements Facility of the Materials Research Center at Northwestern University supported in part by the National Science Foundation under Grant NSF-DMR79-23573, Funding Information: This work was supported by the Ceramics Program of the Division of Basic",

year = "1982",

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doi = "10.1016/0040-6090(82)90265-6",

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T1 - Photovoltaic properties of ZnSe{plus 45 degree rule}GaAs heterojunctions

AU - Besomi, Paul

AU - Christianson, Keith

AU - Wessels, Bruce W.

N1 - Funding Information: Energy Sciences, Department of Energy, under Contract DE-AC02-79ER10390. The heterojunction spectral response was measured in the Optical Measurements Facility of the Materials Research Center at Northwestern University supported in part by the National Science Foundation under Grant NSF-DMR79-23573, Funding Information: This work was supported by the Ceramics Program of the Division of Basic

PY - 1982/1/15

Y1 - 1982/1/15

N2 - ZnSe{plus 45 degree rule}GaAs heterojunction photovoltaic devices were prepared by epitaxial growth of high conductivity ZnSe on p-type GaAs using chemical vapor transport. The heterojunctions had a uniform spectral response for energies between 1.6 and 2.6 eV. For simulated solar radiation, power conversion efficiencies of 7% were measured on cells without antireflection coatings. The solar conversion efficiencies were found to be strongly influenced by the ZnSe thin film preparation conditions.

AB - ZnSe{plus 45 degree rule}GaAs heterojunction photovoltaic devices were prepared by epitaxial growth of high conductivity ZnSe on p-type GaAs using chemical vapor transport. The heterojunctions had a uniform spectral response for energies between 1.6 and 2.6 eV. For simulated solar radiation, power conversion efficiencies of 7% were measured on cells without antireflection coatings. The solar conversion efficiencies were found to be strongly influenced by the ZnSe thin film preparation conditions.

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