Photovoltaic properties of ZnSe{plus 45 degree rule}GaAs heterojunctions

Paul Besomi; Keith Christianson; Bruce W. Wessels

doi:10.1016/0040-6090(82)90265-6

Photovoltaic properties of ZnSe{plus 45 degree rule}GaAs heterojunctions

Paul Besomi^*, Keith Christianson, Bruce W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

ZnSe{plus 45 degree rule}GaAs heterojunction photovoltaic devices were prepared by epitaxial growth of high conductivity ZnSe on p-type GaAs using chemical vapor transport. The heterojunctions had a uniform spectral response for energies between 1.6 and 2.6 eV. For simulated solar radiation, power conversion efficiencies of 7% were measured on cells without antireflection coatings. The solar conversion efficiencies were found to be strongly influenced by the ZnSe thin film preparation conditions.

Original language	English (US)
Pages (from-to)	113-118
Number of pages	6
Journal	Thin Solid Films
Volume	87
Issue number	2
DOIs	https://doi.org/10.1016/0040-6090(82)90265-6
State	Published - Jan 15 1982

Funding

Energy Sciences, Department of Energy, under Contract DE-AC02-79ER10390. The heterojunction spectral response was measured in the Optical Measurements Facility of the Materials Research Center at Northwestern University supported in part by the National Science Foundation under Grant NSF-DMR79-23573, This work was supported by the Ceramics Program of the Division of Basic

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/0040-6090(82)90265-6

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title = "Photovoltaic properties of ZnSe{plus 45 degree rule}GaAs heterojunctions",

abstract = "ZnSe{plus 45 degree rule}GaAs heterojunction photovoltaic devices were prepared by epitaxial growth of high conductivity ZnSe on p-type GaAs using chemical vapor transport. The heterojunctions had a uniform spectral response for energies between 1.6 and 2.6 eV. For simulated solar radiation, power conversion efficiencies of 7% were measured on cells without antireflection coatings. The solar conversion efficiencies were found to be strongly influenced by the ZnSe thin film preparation conditions.",

author = "Paul Besomi and Keith Christianson and Wessels, {Bruce W.}",

note = "Funding Information: Energy Sciences, Department of Energy, under Contract DE-AC02-79ER10390. The heterojunction spectral response was measured in the Optical Measurements Facility of the Materials Research Center at Northwestern University supported in part by the National Science Foundation under Grant NSF-DMR79-23573, Funding Information: This work was supported by the Ceramics Program of the Division of Basic",

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doi = "10.1016/0040-6090(82)90265-6",

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T1 - Photovoltaic properties of ZnSe{plus 45 degree rule}GaAs heterojunctions

AU - Besomi, Paul

AU - Christianson, Keith

AU - Wessels, Bruce W.

N1 - Funding Information: Energy Sciences, Department of Energy, under Contract DE-AC02-79ER10390. The heterojunction spectral response was measured in the Optical Measurements Facility of the Materials Research Center at Northwestern University supported in part by the National Science Foundation under Grant NSF-DMR79-23573, Funding Information: This work was supported by the Ceramics Program of the Division of Basic

PY - 1982/1/15

Y1 - 1982/1/15

N2 - ZnSe{plus 45 degree rule}GaAs heterojunction photovoltaic devices were prepared by epitaxial growth of high conductivity ZnSe on p-type GaAs using chemical vapor transport. The heterojunctions had a uniform spectral response for energies between 1.6 and 2.6 eV. For simulated solar radiation, power conversion efficiencies of 7% were measured on cells without antireflection coatings. The solar conversion efficiencies were found to be strongly influenced by the ZnSe thin film preparation conditions.

AB - ZnSe{plus 45 degree rule}GaAs heterojunction photovoltaic devices were prepared by epitaxial growth of high conductivity ZnSe on p-type GaAs using chemical vapor transport. The heterojunctions had a uniform spectral response for energies between 1.6 and 2.6 eV. For simulated solar radiation, power conversion efficiencies of 7% were measured on cells without antireflection coatings. The solar conversion efficiencies were found to be strongly influenced by the ZnSe thin film preparation conditions.

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Photovoltaic properties of ZnSe{plus 45 degree rule}GaAs heterojunctions

Abstract

Funding

ASJC Scopus subject areas

UN SDGs

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