Photovoltaic properties of ZnSe{plus 45 degree rule}GaAs heterojunctions

Paul Besomi*, Keith Christianson, Bruce W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

ZnSe{plus 45 degree rule}GaAs heterojunction photovoltaic devices were prepared by epitaxial growth of high conductivity ZnSe on p-type GaAs using chemical vapor transport. The heterojunctions had a uniform spectral response for energies between 1.6 and 2.6 eV. For simulated solar radiation, power conversion efficiencies of 7% were measured on cells without antireflection coatings. The solar conversion efficiencies were found to be strongly influenced by the ZnSe thin film preparation conditions.

Original languageEnglish (US)
Pages (from-to)113-118
Number of pages6
JournalThin Solid Films
Volume87
Issue number2
DOIs
StatePublished - Jan 15 1982

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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