Abstract
ZnSe{plus 45 degree rule}GaAs heterojunction photovoltaic devices were prepared by epitaxial growth of high conductivity ZnSe on p-type GaAs using chemical vapor transport. The heterojunctions had a uniform spectral response for energies between 1.6 and 2.6 eV. For simulated solar radiation, power conversion efficiencies of 7% were measured on cells without antireflection coatings. The solar conversion efficiencies were found to be strongly influenced by the ZnSe thin film preparation conditions.
Original language | English (US) |
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Pages (from-to) | 113-118 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 87 |
Issue number | 2 |
DOIs | |
State | Published - Jan 15 1982 |
Funding
Energy Sciences, Department of Energy, under Contract DE-AC02-79ER10390. The heterojunction spectral response was measured in the Optical Measurements Facility of the Materials Research Center at Northwestern University supported in part by the National Science Foundation under Grant NSF-DMR79-23573, This work was supported by the Ceramics Program of the Division of Basic
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry