Abstract
ZnSe{plus 45 degree rule}GaAs heterojunction photovoltaic devices were prepared by epitaxial growth of high conductivity ZnSe on p-type GaAs using chemical vapor transport. The heterojunctions had a uniform spectral response for energies between 1.6 and 2.6 eV. For simulated solar radiation, power conversion efficiencies of 7% were measured on cells without antireflection coatings. The solar conversion efficiencies were found to be strongly influenced by the ZnSe thin film preparation conditions.
Original language | English (US) |
---|---|
Pages (from-to) | 113-118 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 87 |
Issue number | 2 |
DOIs | |
State | Published - Jan 15 1982 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry