Physical and electrical properties of chemical vapor grown GaN nano/microstructures

Jianye Li*, Jie Liu, Lung Shen Wang, Robert P.H. Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


Wurtzitic gallium nitride nano- and microleaves were controlled grown through a facile chemical vapor deposition method. This is the first report of GaN nanoleaves, a new morphology of GaN nanostructures. The as-grown GaN structures were characterized by means of X-ray powder diffraction, scanning electron microscopy, energy dispersive X-ray, transmission electron microscopy, and selected area electron diffraction. Raman scattering spectra of the GaN leaves were studied. Field effect transistors based on individual GaN nanoleaves were fabricated, and the electrical transport results revealed a pronounced n-type gating effect of the GaN nanostructures.

Original languageEnglish (US)
Pages (from-to)10325-10329
Number of pages5
JournalInorganic chemistry
Issue number22
StatePublished - Nov 17 2008

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Inorganic Chemistry


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