Abstract
Auger, Rutherford backscattering, and x-ray-diffraction measurements show that plasma-grown oxide films on Ga0.64Al0.36As are amorphous, uniform in composition with depth, and possess very sharp oxide-semiconductor interfaces. The electrical properties (I-V, C-V) of these films are such that they may be used for surface passivation of optoelectronic devices and as dielectric layers in electronic device fabrication.
Original language | English (US) |
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Pages (from-to) | 5384-5386 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 48 |
Issue number | 12 |
DOIs | |
State | Published - 1977 |
ASJC Scopus subject areas
- General Physics and Astronomy