Physical and electrical properties of plasma-grown oxide on Ga _0.64Al_0.36As

INIS

• depth 33%
• dielectrics 33%
• electrical properties 66%
• electronic equipment 33%
• fabrication 33%
• films 66%
• interfaces 33%
• layers 33%
• optoelectronic devices 33%
• oxides 100%
• passivation 33%
• physical properties 33%
• plasma 66%
• rutherford backscattering spectroscopy 33%
• semiconductor materials 33%
• surfaces 33%
• x-ray diffraction 33%

Physics

• Backscattering 33%
• Dielectrics 33%
• Diffraction 33%
• Electrical Properties 66%
• Fabrication 33%
• Optoelectronic Device 33%
• Oxide 66%
• Semiconductor 33%
• Surface Passivation 33%