PHYSICAL PROPERTIES OF PLASMA-GROWN GaAs OXIDES.

R. P H Chang; A. J. Polak; D. L. Allara; C. C. Chang; W. A. Lanford

doi:10.1116/1.570108

PHYSICAL PROPERTIES OF PLASMA-GROWN GaAs OXIDES.

R. P H Chang^*, A. J. Polak, D. L. Allara, C. C. Chang, W. A. Lanford

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The growth kinetics and the compositions of plasma grown oxides on GaAs have been studied in detail using Auger spectroscopy combined with nuclear resonance profiling and infrared spectroscopy. The growth rate has been carefully mapped out as a function of the substrate temperature (0 degree - 100 degree C) and bias voltage (20 - 100 V). It is found that with low substrate temperatures during oxidation stoichiometric oxides are formed, and high temperatures and voltages give the fastest growth rates. The ambients in which postoxidation anneals take place influence the interfacial and oxide properties.

Original language	English (US)
Pages (from-to)	888-895
Number of pages	8
Journal	Journal of vacuum science & technology
Volume	16
Issue number	3
DOIs	https://doi.org/10.1116/1.570108
State	Published - 1979

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Engineering(all)

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title = "PHYSICAL PROPERTIES OF PLASMA-GROWN GaAs OXIDES.",

abstract = "The growth kinetics and the compositions of plasma grown oxides on GaAs have been studied in detail using Auger spectroscopy combined with nuclear resonance profiling and infrared spectroscopy. The growth rate has been carefully mapped out as a function of the substrate temperature (0 degree - 100 degree C) and bias voltage (20 - 100 V). It is found that with low substrate temperatures during oxidation stoichiometric oxides are formed, and high temperatures and voltages give the fastest growth rates. The ambients in which postoxidation anneals take place influence the interfacial and oxide properties.",

author = "Chang, {R. P H} and Polak, {A. J.} and Allara, {D. L.} and Chang, {C. C.} and Lanford, {W. A.}",

year = "1979",

doi = "10.1116/1.570108",

language = "English (US)",

volume = "16",

pages = "888--895",

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AU - Chang, R. P H

AU - Polak, A. J.

AU - Allara, D. L.

AU - Chang, C. C.

AU - Lanford, W. A.

PY - 1979

Y1 - 1979

N2 - The growth kinetics and the compositions of plasma grown oxides on GaAs have been studied in detail using Auger spectroscopy combined with nuclear resonance profiling and infrared spectroscopy. The growth rate has been carefully mapped out as a function of the substrate temperature (0 degree - 100 degree C) and bias voltage (20 - 100 V). It is found that with low substrate temperatures during oxidation stoichiometric oxides are formed, and high temperatures and voltages give the fastest growth rates. The ambients in which postoxidation anneals take place influence the interfacial and oxide properties.

AB - The growth kinetics and the compositions of plasma grown oxides on GaAs have been studied in detail using Auger spectroscopy combined with nuclear resonance profiling and infrared spectroscopy. The growth rate has been carefully mapped out as a function of the substrate temperature (0 degree - 100 degree C) and bias voltage (20 - 100 V). It is found that with low substrate temperatures during oxidation stoichiometric oxides are formed, and high temperatures and voltages give the fastest growth rates. The ambients in which postoxidation anneals take place influence the interfacial and oxide properties.

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PHYSICAL PROPERTIES OF PLASMA-GROWN GaAs OXIDES.

Abstract

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