The growth kinetics and the compositions of plasma grown oxides on GaAs have been studied in detail using Auger spectroscopy combined with nuclear resonance profiling and infrared spectroscopy. The growth rate has been carefully mapped out as a function of the substrate temperature (0 degree - 100 degree C) and bias voltage (20 - 100 V). It is found that with low substrate temperatures during oxidation stoichiometric oxides are formed, and high temperatures and voltages give the fastest growth rates. The ambients in which postoxidation anneals take place influence the interfacial and oxide properties.
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