Physics and growth of Si-doped two-dimensional high mobility hole gases on (110) oriented GaAs

F. Fischer*, M. Grayson, D. Schuh, M. Bichler, G. Abstreiter

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the physics of the first high mobility two-dimensional hole gas (2DHG) in a modulation-doped heterostructure on the (110) GaAs surface using Si as a dopant. The 2DHG has a high hole mobility of μ = 175 000 cm 2/V-1 s-1 at a density of n = 2.3 × 1011 cm-2. The density of the 2DHG is either tuned by an evaporated Al front gate or a persistent photoconductivity effect with a factor of ×2 increase in density. We study the anisotropy of the mobility in the two principal in-plane directions [11̄0] and [001] and perform 6-band k p simulations of the bandstructure for 2DHGs without taking bulk inversion asymmetry into account.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages443-444
Number of pages2
Volume772
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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