Piperazine Suppresses Self-Doping in CsSnI3 Perovskite Solar Cells

Tze Bin Song; Takamichi Yokoyama; Jenna Logsdon; Michael R. Wasielewski; Shinji Aramaki; Mercouri G. Kanatzidis

doi:10.1021/acsaem.8b00866

Piperazine Suppresses Self-Doping in CsSnI₃ Perovskite Solar Cells

Tze Bin Song, Takamichi Yokoyama, Jenna Logsdon, Michael R. Wasielewski, Shinji Aramaki, Mercouri G. Kanatzidis^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

Tin-based halide perovskite materials are promising candidates for lead-free halide perovskite solar cells. However, they suffer from poor device reproducibility and limited overall power conversion efficiencies due to their tendency to become semimetallic from p-type defect states. Herein, we demonstrate an effective approach to address this issue via the addition of piperazine to the precursor solution of tin-based halide perovskite films, to suppress the undesirable p-doping of CsSnI₃ films. Piperazine is found to significantly reduce the conductivity of CsSnI₃ films, improve the film coverage, and at the same time suppress the crystallization of excess SnI₂. Consequently, short-circuit behaviors are eliminated, with significantly improved CsSnI₃ solar-cell performance. Moreover, the effects of incorporating SnCl₂ and SnF₂ into the CsSnI₃ devices were investigated in conjunction with addition of piperazine to achieve CsSnI₃ devices with a maximum power conversion efficiency of 3.83%.

Original language	English (US)
Pages (from-to)	4221-4226
Number of pages	6
Journal	ACS Applied Energy Materials
Volume	1
Issue number	8
DOIs	https://doi.org/10.1021/acsaem.8b00866
State	Published - Aug 27 2018

Keywords

diamine
lead-free
perovskite
piperazine
solar cells

ASJC Scopus subject areas

Chemical Engineering (miscellaneous)
Energy Engineering and Power Technology
Electrochemistry
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1021/acsaem.8b00866

Cite this

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title = "Piperazine Suppresses Self-Doping in CsSnI3 Perovskite Solar Cells",

abstract = "Tin-based halide perovskite materials are promising candidates for lead-free halide perovskite solar cells. However, they suffer from poor device reproducibility and limited overall power conversion efficiencies due to their tendency to become semimetallic from p-type defect states. Herein, we demonstrate an effective approach to address this issue via the addition of piperazine to the precursor solution of tin-based halide perovskite films, to suppress the undesirable p-doping of CsSnI3 films. Piperazine is found to significantly reduce the conductivity of CsSnI3 films, improve the film coverage, and at the same time suppress the crystallization of excess SnI2. Consequently, short-circuit behaviors are eliminated, with significantly improved CsSnI3 solar-cell performance. Moreover, the effects of incorporating SnCl2 and SnF2 into the CsSnI3 devices were investigated in conjunction with addition of piperazine to achieve CsSnI3 devices with a maximum power conversion efficiency of 3.83%.",

keywords = "diamine, lead-free, perovskite, piperazine, solar cells",

author = "Song, {Tze Bin} and Takamichi Yokoyama and Jenna Logsdon and Wasielewski, {Michael R.} and Shinji Aramaki and Kanatzidis, {Mercouri G.}",

note = "Funding Information: This work was supported in part by the ANSER Center, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award DE-SC0001059 (solar absorber material synthesis and solar-cell characterization) and the Institute for Sustainability and Energy at Northwestern University. Publisher Copyright: {\textcopyright} Copyright 2018 American Chemical Society.",

year = "2018",

month = aug,

day = "27",

doi = "10.1021/acsaem.8b00866",

language = "English (US)",

volume = "1",

pages = "4221--4226",

journal = "ACS Applied Energy Materials",

issn = "2574-0962",

publisher = "American Chemical Society",

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TY - JOUR

T1 - Piperazine Suppresses Self-Doping in CsSnI3 Perovskite Solar Cells

AU - Song, Tze Bin

AU - Yokoyama, Takamichi

AU - Logsdon, Jenna

AU - Wasielewski, Michael R.

AU - Aramaki, Shinji

AU - Kanatzidis, Mercouri G.

N1 - Funding Information: This work was supported in part by the ANSER Center, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award DE-SC0001059 (solar absorber material synthesis and solar-cell characterization) and the Institute for Sustainability and Energy at Northwestern University. Publisher Copyright: © Copyright 2018 American Chemical Society.

PY - 2018/8/27

Y1 - 2018/8/27

N2 - Tin-based halide perovskite materials are promising candidates for lead-free halide perovskite solar cells. However, they suffer from poor device reproducibility and limited overall power conversion efficiencies due to their tendency to become semimetallic from p-type defect states. Herein, we demonstrate an effective approach to address this issue via the addition of piperazine to the precursor solution of tin-based halide perovskite films, to suppress the undesirable p-doping of CsSnI3 films. Piperazine is found to significantly reduce the conductivity of CsSnI3 films, improve the film coverage, and at the same time suppress the crystallization of excess SnI2. Consequently, short-circuit behaviors are eliminated, with significantly improved CsSnI3 solar-cell performance. Moreover, the effects of incorporating SnCl2 and SnF2 into the CsSnI3 devices were investigated in conjunction with addition of piperazine to achieve CsSnI3 devices with a maximum power conversion efficiency of 3.83%.

AB - Tin-based halide perovskite materials are promising candidates for lead-free halide perovskite solar cells. However, they suffer from poor device reproducibility and limited overall power conversion efficiencies due to their tendency to become semimetallic from p-type defect states. Herein, we demonstrate an effective approach to address this issue via the addition of piperazine to the precursor solution of tin-based halide perovskite films, to suppress the undesirable p-doping of CsSnI3 films. Piperazine is found to significantly reduce the conductivity of CsSnI3 films, improve the film coverage, and at the same time suppress the crystallization of excess SnI2. Consequently, short-circuit behaviors are eliminated, with significantly improved CsSnI3 solar-cell performance. Moreover, the effects of incorporating SnCl2 and SnF2 into the CsSnI3 devices were investigated in conjunction with addition of piperazine to achieve CsSnI3 devices with a maximum power conversion efficiency of 3.83%.

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