Planar monolithic integrated photoreceiver for 1.3-1.55 μm wavelength applications using GaInAs-GaAs heteroepitaxies

M. Razeghi*, J. Ramdani, H. Verriele, D. Decoster, M. Constant, J. Vanbremeersch

*Corresponding author for this work

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

We report the first fabrication of a monolithic integrated circuit consisting of a Ga0.47In0.53As planar photoconductive detector (suitable for 1.3-1.55 μm wavelength optical communication systems) associated with a GaAs field-effect transistor. The gain, response times, and noise properties of the photoconductive detector and the integrated photoreceiver have been investigated, taking into account particular aspects of the material and integrated circuit structure.

Original languageEnglish (US)
Pages (from-to)215-217
Number of pages3
JournalApplied Physics Letters
Volume49
Issue number4
DOIs
StatePublished - Dec 1 1986

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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