In this Letter, we report the demonstration of zinc ion-implantation to realize planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx superlattices. At 77 K, the photodetectors exhibit a peak responsivity of 0.68 A/W at 3.35 lm, corresponding to a quantum efficiency of 23.5% under Vb = -80 mV, without anti-reflection coating; these photodetectors have a 100% cutoff wavelength of 4.28 lm. With an R0 × A value of 1.53 × 104 Ω cm2 and a dark current density of 1.23 × 10-6 A/cm2 under an applied bias of -80 mV at 77 K, the photodetectors exhibit a specific detectivity of 9.12 × 1011 cm·Hz1/2/W.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)