Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation

Arash Dehzangi, Donghai Wu, Ryan McClintock, Jiakai Li, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this Letter, we report the demonstration of zinc ion-implantation to realize planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx superlattices. At 77 K, the photodetectors exhibit a peak responsivity of 0.68 A/W at 3.35 lm, corresponding to a quantum efficiency of 23.5% under Vb = -80 mV, without anti-reflection coating; these photodetectors have a 100% cutoff wavelength of 4.28 lm. With an R0 × A value of 1.53 × 104 Ω cm2 and a dark current density of 1.23 × 10-6 A/cm2 under an applied bias of -80 mV at 77 K, the photodetectors exhibit a specific detectivity of 9.12 × 1011 cm·Hz1/2/W.

Original languageEnglish (US)
Article number221103
JournalApplied Physics Letters
Volume116
Issue number22
DOIs
StatePublished - Jun 2 2020

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation'. Together they form a unique fingerprint.

Cite this