Thin dielectric films such as silicon dioxide and silicon nitride are used extensively in integrated circuit fabrication for the purpose of isolation, diffusion inhibition, charge storage, etc. In the case when dielectric films are used as an insulating layer for metal-insulator-semiconductor field effect transistors (MISFET) special care is required in the processing of these films. In this article, we discuss briefly the current understanding of some of the basic requirements for forming thin dielectric films for MISFET applications. Examples will be given for the case of depositing oxides on InP.
|Original language||English (US)|
|Title of host publication||Unknown Host Publication Title|
|Editors||G.G. Bentini, E. Fogarassy, A. Golanski|
|Publisher||Les Editions de Physique|
|Number of pages||3|
|State||Published - Dec 1 1986|
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