PLASMA ETCHING OF III-V COMPOUND SEMICONDUCTOR MATERIALS AND THEIR OXIDES.

G. Smolinsky; R. P. Chang; T. M. Mayer

doi:10.1116/1.570690

PLASMA ETCHING OF III-V COMPOUND SEMICONDUCTOR MATERIALS AND THEIR OXIDES.

G. Smolinsky^*, R. P. Chang, T. M. Mayer

^*Corresponding author for this work

Materials Science and Engineering

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Abstract

A report is presented on qualitative results on the plasma etching of GaAs and its oxide mainly using discharges of one and two carbon, chlorine-containing molecules. The effects of admitting oxygen and especially hydrogen into the plasma are described. In addition, results using either hydrogen, hydrogen fluoride, hydrogen chloride, phosphines, or some fluorocarbon are presented. Speculations on chemical mechanisms and potential reactive species are made.

Original language	English (US)
Pages (from-to)	12-16
Number of pages	5
Journal	Journal of vacuum science & technology
Volume	18
Issue number	1
DOIs	https://doi.org/10.1116/1.570690
State	Published - Jan 1 1981

ASJC Scopus subject areas

Engineering(all)

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@article{002584a4d4a44cf681a3a0264d2958df,

title = "PLASMA ETCHING OF III-V COMPOUND SEMICONDUCTOR MATERIALS AND THEIR OXIDES.",

abstract = "A report is presented on qualitative results on the plasma etching of GaAs and its oxide mainly using discharges of one and two carbon, chlorine-containing molecules. The effects of admitting oxygen and especially hydrogen into the plasma are described. In addition, results using either hydrogen, hydrogen fluoride, hydrogen chloride, phosphines, or some fluorocarbon are presented. Speculations on chemical mechanisms and potential reactive species are made.",

author = "G. Smolinsky and Chang, {R. P.} and Mayer, {T. M.}",

year = "1981",

month = jan,

day = "1",

doi = "10.1116/1.570690",

language = "English (US)",

volume = "18",

pages = "12--16",

journal = "Journal of Vacuum Science and Technology",

issn = "0022-5355",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - PLASMA ETCHING OF III-V COMPOUND SEMICONDUCTOR MATERIALS AND THEIR OXIDES.

AU - Smolinsky, G.

AU - Chang, R. P.

AU - Mayer, T. M.

PY - 1981/1/1

Y1 - 1981/1/1

N2 - A report is presented on qualitative results on the plasma etching of GaAs and its oxide mainly using discharges of one and two carbon, chlorine-containing molecules. The effects of admitting oxygen and especially hydrogen into the plasma are described. In addition, results using either hydrogen, hydrogen fluoride, hydrogen chloride, phosphines, or some fluorocarbon are presented. Speculations on chemical mechanisms and potential reactive species are made.

AB - A report is presented on qualitative results on the plasma etching of GaAs and its oxide mainly using discharges of one and two carbon, chlorine-containing molecules. The effects of admitting oxygen and especially hydrogen into the plasma are described. In addition, results using either hydrogen, hydrogen fluoride, hydrogen chloride, phosphines, or some fluorocarbon are presented. Speculations on chemical mechanisms and potential reactive species are made.

UR - http://www.scopus.com/inward/record.url?scp=0019397135&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019397135&partnerID=8YFLogxK

U2 - 10.1116/1.570690

DO - 10.1116/1.570690

M3 - Article

AN - SCOPUS:0019397135

SN - 0022-5355

VL - 18

SP - 12

EP - 16

JO - Journal of Vacuum Science and Technology

JF - Journal of Vacuum Science and Technology

IS - 1

ER -

PLASMA ETCHING OF III-V COMPOUND SEMICONDUCTOR MATERIALS AND THEIR OXIDES.

Abstract

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