A report is presented on qualitative results on the plasma etching of GaAs and its oxide mainly using discharges of one and two carbon, chlorine-containing molecules. The effects of admitting oxygen and especially hydrogen into the plasma are described. In addition, results using either hydrogen, hydrogen fluoride, hydrogen chloride, phosphines, or some fluorocarbon are presented. Speculations on chemical mechanisms and potential reactive species are made.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of vacuum science & technology|
|State||Published - Jan 1 1981|
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