PLASMA ETCHING OF III-V COMPOUND SEMICONDUCTOR MATERIALS AND THEIR OXIDES.

G. Smolinsky*, R. P. Chang, T. M. Mayer

*Corresponding author for this work

Research output: Contribution to journalArticle

64 Scopus citations

Abstract

A report is presented on qualitative results on the plasma etching of GaAs and its oxide mainly using discharges of one and two carbon, chlorine-containing molecules. The effects of admitting oxygen and especially hydrogen into the plasma are described. In addition, results using either hydrogen, hydrogen fluoride, hydrogen chloride, phosphines, or some fluorocarbon are presented. Speculations on chemical mechanisms and potential reactive species are made.

Original languageEnglish (US)
Pages (from-to)12-16
Number of pages5
JournalJournal of vacuum science & technology
Volume18
Issue number1
DOIs
StatePublished - Jan 1 1981

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'PLASMA ETCHING OF III-V COMPOUND SEMICONDUCTOR MATERIALS AND THEIR OXIDES.'. Together they form a unique fingerprint.

  • Cite this