PLASMA ETCHING OF III-V COMPOUND SEMICONDUCTOR MATERIALS AND THEIR OXIDES.

INIS

• plasma 100%
• etching 66%
• oxides 66%
• hydrogen 66%
• molecules 33%
• semiconductor materials 33%
• carbon 33%
• oxygen 33%
• vanadium compounds 33%
• chlorine 33%
• gallium arsenides 33%
• phosphines 33%
• hydrogen chlorides 33%
• hydrogen fluorides 33%

Material Science

• Gallium Arsenide 66%
• Oxide 66%
• Plasma Etching 66%
• Semiconductor Material 33%
• III-V Semiconductor 33%

Engineering

• Chemical Mechanism 33%
• Semiconductor Material 33%
• Chemical Potential 33%