Plasma oxidation of aluminum film on GaAs - A study by Auger spectroscopy and transmission electron microscopy

R. P H Chang; C. C. Chang; T. T. Sheng

doi:10.1063/1.89275

Plasma oxidation of aluminum film on GaAs - A study by Auger spectroscopy and transmission electron microscopy

R. P H Chang^*, C. C. Chang, T. T. Sheng

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Plasma oxidation of thin polycrystalline aluminum films (∼100 Å) on GaAs has shown that oxidation of aluminum proceeds by an initial rapid grain-boundary oxidation of the aluminum followed by a slower oxidation towards the centers of the individual grains. Continued oxidation results in the growth of Ga-As- oxide layers on both sides of the Al-oxide film indicating that the oxidation of GaAs proceeds by an electric-field-assisted in-migration of oxygen through the Al-oxide layer toward the interface and the out-migration of Ga and As toward the surface. This oxidation process can be used to form an amorphous film of Al-oxide on GaAs. By using the Al-oxide film as a preferential filter for the migration of Ga and As, an amorphous Ga-As-oxide film with a Ga/As concentration ratio of unity all the way to the GaAs substrate can also be achieved.

Original language	English (US)
Pages (from-to)	657-659
Number of pages	3
Journal	Applied Physics Letters
Volume	30
Issue number	12
DOIs	https://doi.org/10.1063/1.89275
State	Published - Dec 1 1977

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.89275

Cite this

@article{868cad420fa0403584885aaa4487bc24,

title = "Plasma oxidation of aluminum film on GaAs - A study by Auger spectroscopy and transmission electron microscopy",

abstract = "Plasma oxidation of thin polycrystalline aluminum films (∼100 {\AA}) on GaAs has shown that oxidation of aluminum proceeds by an initial rapid grain-boundary oxidation of the aluminum followed by a slower oxidation towards the centers of the individual grains. Continued oxidation results in the growth of Ga-As- oxide layers on both sides of the Al-oxide film indicating that the oxidation of GaAs proceeds by an electric-field-assisted in-migration of oxygen through the Al-oxide layer toward the interface and the out-migration of Ga and As toward the surface. This oxidation process can be used to form an amorphous film of Al-oxide on GaAs. By using the Al-oxide film as a preferential filter for the migration of Ga and As, an amorphous Ga-As-oxide film with a Ga/As concentration ratio of unity all the way to the GaAs substrate can also be achieved.",

author = "Chang, {R. P H} and Chang, {C. C.} and Sheng, {T. T.}",

year = "1977",

month = dec,

day = "1",

doi = "10.1063/1.89275",

language = "English (US)",

volume = "30",

pages = "657--659",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Plasma oxidation of aluminum film on GaAs - A study by Auger spectroscopy and transmission electron microscopy

AU - Chang, R. P H

AU - Chang, C. C.

AU - Sheng, T. T.

PY - 1977/12/1

Y1 - 1977/12/1

N2 - Plasma oxidation of thin polycrystalline aluminum films (∼100 Å) on GaAs has shown that oxidation of aluminum proceeds by an initial rapid grain-boundary oxidation of the aluminum followed by a slower oxidation towards the centers of the individual grains. Continued oxidation results in the growth of Ga-As- oxide layers on both sides of the Al-oxide film indicating that the oxidation of GaAs proceeds by an electric-field-assisted in-migration of oxygen through the Al-oxide layer toward the interface and the out-migration of Ga and As toward the surface. This oxidation process can be used to form an amorphous film of Al-oxide on GaAs. By using the Al-oxide film as a preferential filter for the migration of Ga and As, an amorphous Ga-As-oxide film with a Ga/As concentration ratio of unity all the way to the GaAs substrate can also be achieved.

AB - Plasma oxidation of thin polycrystalline aluminum films (∼100 Å) on GaAs has shown that oxidation of aluminum proceeds by an initial rapid grain-boundary oxidation of the aluminum followed by a slower oxidation towards the centers of the individual grains. Continued oxidation results in the growth of Ga-As- oxide layers on both sides of the Al-oxide film indicating that the oxidation of GaAs proceeds by an electric-field-assisted in-migration of oxygen through the Al-oxide layer toward the interface and the out-migration of Ga and As toward the surface. This oxidation process can be used to form an amorphous film of Al-oxide on GaAs. By using the Al-oxide film as a preferential filter for the migration of Ga and As, an amorphous Ga-As-oxide film with a Ga/As concentration ratio of unity all the way to the GaAs substrate can also be achieved.

UR - http://www.scopus.com/inward/record.url?scp=0000281810&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000281810&partnerID=8YFLogxK

U2 - 10.1063/1.89275

DO - 10.1063/1.89275

M3 - Article

AN - SCOPUS:0000281810

VL - 30

SP - 657

EP - 659

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

ER -

Plasma oxidation of aluminum film on GaAs - A study by Auger spectroscopy and transmission electron microscopy

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this