Plasma oxidation of GaAs

R. P H Chang; A. K. Sinha

doi:10.1063/1.88872

Plasma oxidation of GaAs

R. P H Chang^*, A. K. Sinha

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

90 Scopus citations

Abstract

A new process for plasma oxidation of GaAs has been developed. Oxide films formed by this simple one-step dry process have amorphous structure, with composition and thickness uniformity better than ±10% over areas ≲1 cm². They have a gallium-to-arsenic ratio of nearly one. The electrical properties (I-V, C-V) of the films are such that this process may be useful in device fabrication.

Original language	English (US)
Pages (from-to)	56-58
Number of pages	3
Journal	Applied Physics Letters
Volume	29
Issue number	1
DOIs	https://doi.org/10.1063/1.88872
State	Published - 1976

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Plasma oxidation of GaAs",

abstract = "A new process for plasma oxidation of GaAs has been developed. Oxide films formed by this simple one-step dry process have amorphous structure, with composition and thickness uniformity better than ±10% over areas ≲1 cm2. They have a gallium-to-arsenic ratio of nearly one. The electrical properties (I-V, C-V) of the films are such that this process may be useful in device fabrication.",

author = "Chang, {R. P H} and Sinha, {A. K.}",

year = "1976",

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AB - A new process for plasma oxidation of GaAs has been developed. Oxide films formed by this simple one-step dry process have amorphous structure, with composition and thickness uniformity better than ±10% over areas ≲1 cm2. They have a gallium-to-arsenic ratio of nearly one. The electrical properties (I-V, C-V) of the films are such that this process may be useful in device fabrication.

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Plasma oxidation of GaAs

Abstract

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