Plasma oxidation of GaAs

R. P H Chang*, A. K. Sinha

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

78 Scopus citations

Abstract

A new process for plasma oxidation of GaAs has been developed. Oxide films formed by this simple one-step dry process have amorphous structure, with composition and thickness uniformity better than ±10% over areas ≲1 cm2. They have a gallium-to-arsenic ratio of nearly one. The electrical properties (I-V, C-V) of the films are such that this process may be useful in device fabrication.

Original languageEnglish (US)
Pages (from-to)56-58
Number of pages3
JournalApplied Physics Letters
Volume29
Issue number1
DOIs
StatePublished - 1976

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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