TY - GEN
T1 - Plasmonic lithography
AU - Srituravanich, W.
AU - Fang, N.
AU - Sun, C.
AU - Durant, S.
AU - Ambati, M.
AU - Zhang, X.
PY - 2004/1/1
Y1 - 2004/1/1
N2 - As the next-generation technology moves below 100 nm mark, the need arises for a capability of manipulation and positioning of light on the scale of tens of nanometers. Plasmonic optics opens the door to operate beyond the diffraction limit by placing a sub-wavelength aperture in an opaque metal sheet. Recent experimental works [1] demonstrated that a giant transmission efficiency (>15%) can be achieved by exciting the surface plasmons with artificially displaced arrays of sub-wavelength holes. Moreover the effectively short modal wavelength of surface plasmons opens up the possibility to overcome the diffraction limit in the near-field lithography. This shows promise in a revolutionary high throughput and high density optical lithography. In this paper, we demonstrate the feasibility of near-field nanolithography by exciting surface plasmon on nanostructures perforated on metal film. Plasmonic masks of hole arrays and "bull's eye" structures (single hole surrounded by concentric ring grating) [2] are fabricated using Focused Ion Beam (FIB). A special index matching spacer layer is then deposited onto the masks to ensure high transmissivity. Consequently, an I-line negative photoresist is spun on the top of spacer layer in order to obtain the exposure results. A FDTD simulation study has been conducted to predict the near field profile [3] of the designed plasmonic masks. Our preliminary exposure test using these hole-array masks demonstrated 170 nm period dot array patterns, well beyond the resolution limit of conventional lithography using near-UV wavelength. Furthermore, the exposure result obtained from the bull's eye structures indicated the characteristics of periodicity and polarization dependence, which confirmed the contribution of surface plasmons.
AB - As the next-generation technology moves below 100 nm mark, the need arises for a capability of manipulation and positioning of light on the scale of tens of nanometers. Plasmonic optics opens the door to operate beyond the diffraction limit by placing a sub-wavelength aperture in an opaque metal sheet. Recent experimental works [1] demonstrated that a giant transmission efficiency (>15%) can be achieved by exciting the surface plasmons with artificially displaced arrays of sub-wavelength holes. Moreover the effectively short modal wavelength of surface plasmons opens up the possibility to overcome the diffraction limit in the near-field lithography. This shows promise in a revolutionary high throughput and high density optical lithography. In this paper, we demonstrate the feasibility of near-field nanolithography by exciting surface plasmon on nanostructures perforated on metal film. Plasmonic masks of hole arrays and "bull's eye" structures (single hole surrounded by concentric ring grating) [2] are fabricated using Focused Ion Beam (FIB). A special index matching spacer layer is then deposited onto the masks to ensure high transmissivity. Consequently, an I-line negative photoresist is spun on the top of spacer layer in order to obtain the exposure results. A FDTD simulation study has been conducted to predict the near field profile [3] of the designed plasmonic masks. Our preliminary exposure test using these hole-array masks demonstrated 170 nm period dot array patterns, well beyond the resolution limit of conventional lithography using near-UV wavelength. Furthermore, the exposure result obtained from the bull's eye structures indicated the characteristics of periodicity and polarization dependence, which confirmed the contribution of surface plasmons.
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U2 - 10.1115/nano2004-46023
DO - 10.1115/nano2004-46023
M3 - Conference contribution
AN - SCOPUS:21244445028
SN - 0791841774
SN - 9780791841778
T3 - Proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications
SP - 99
EP - 100
BT - Proceedings of the 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications
PB - American Society of Mechanical Engineers
T2 - 3rd ASME Integrated Nanosystems Conference - Design, Synthesis, and Applications
Y2 - 22 September 2004 through 24 September 2004
ER -