TY - JOUR
T1 - Point defects and electrical properties of Sn-doped In-based transparent conducting oxides
AU - Hwang, J. H.
AU - Edwards, D. D.
AU - Kammler, D. R.
AU - Mason, T. O.
N1 - Funding Information:
This work was supported by the MRSEC program of the National Science Foundation (DMR-9632472) at the Materials Research Center of Northwestern University and made use of the Central Facilities supported by the same MRSEC program. JH and TOM also acknowledge the support of the US Department of Energy under grant no. FG02-84-ER45097. DRK was supported by a National Science Foundation Graduate Fellowship.
PY - 2000/4
Y1 - 2000/4
N2 - In-based transparent conducting oxides (TCOs) share the prevailing defect structure of indium-tin oxide (ITO), i.e. electrons, isolated SnIn donors, and neutral associates, believed to be (2SnInO″i)x. The present work reviews the state of the literature, presents calculated Brouwer diagrams vs. oxygen partial pressure and vs. dopant concentration, and reports intermediate temperature electrical property data (thermopower, conductivity) vs. pO2 and Sn concentration for three systems - polycrystalline bulk ITO, nanocrystalline ITO, and the recently reported ternary cation TCO, Ga3-xIn5+xSn2O16. The influence of non-reduceable tin-oxygen complexes at high doping levels is identified for ITO. Ramifications for In-based TCO properties are discussed.
AB - In-based transparent conducting oxides (TCOs) share the prevailing defect structure of indium-tin oxide (ITO), i.e. electrons, isolated SnIn donors, and neutral associates, believed to be (2SnInO″i)x. The present work reviews the state of the literature, presents calculated Brouwer diagrams vs. oxygen partial pressure and vs. dopant concentration, and reports intermediate temperature electrical property data (thermopower, conductivity) vs. pO2 and Sn concentration for three systems - polycrystalline bulk ITO, nanocrystalline ITO, and the recently reported ternary cation TCO, Ga3-xIn5+xSn2O16. The influence of non-reduceable tin-oxygen complexes at high doping levels is identified for ITO. Ramifications for In-based TCO properties are discussed.
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U2 - 10.1016/S0167-2738(99)00321-5
DO - 10.1016/S0167-2738(99)00321-5
M3 - Article
AN - SCOPUS:0033885559
VL - 129
SP - 135
EP - 144
JO - Solid State Ionics
JF - Solid State Ionics
SN - 0167-2738
IS - 1
ER -