Point defects and electrical properties of Sn-doped In-based transparent conducting oxides

J. H. Hwang; D. D. Edwards; D. R. Kammler; T. O. Mason

doi:10.1016/S0167-2738(99)00321-5

Point defects and electrical properties of Sn-doped In-based transparent conducting oxides

J. H. Hwang^*, D. D. Edwards, D. R. Kammler, T. O. Mason

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

In-based transparent conducting oxides (TCOs) share the prevailing defect structure of indium-tin oxide (ITO), i.e. electrons, isolated Sn_In donors, and neutral associates, believed to be (2Sn_InO″_i)^x. The present work reviews the state of the literature, presents calculated Brouwer diagrams vs. oxygen partial pressure and vs. dopant concentration, and reports intermediate temperature electrical property data (thermopower, conductivity) vs. pO₂ and Sn concentration for three systems - polycrystalline bulk ITO, nanocrystalline ITO, and the recently reported ternary cation TCO, Ga_3-xIn_5+xSn₂O₁₆. The influence of non-reduceable tin-oxygen complexes at high doping levels is identified for ITO. Ramifications for In-based TCO properties are discussed.

Original language	English (US)
Pages (from-to)	135-144
Number of pages	10
Journal	Solid State Ionics
Volume	129
Issue number	1
DOIs	https://doi.org/10.1016/S0167-2738(99)00321-5
State	Published - Apr 2000

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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title = "Point defects and electrical properties of Sn-doped In-based transparent conducting oxides",

abstract = "In-based transparent conducting oxides (TCOs) share the prevailing defect structure of indium-tin oxide (ITO), i.e. electrons, isolated SnIn donors, and neutral associates, believed to be (2SnInO″i)x. The present work reviews the state of the literature, presents calculated Brouwer diagrams vs. oxygen partial pressure and vs. dopant concentration, and reports intermediate temperature electrical property data (thermopower, conductivity) vs. pO2 and Sn concentration for three systems - polycrystalline bulk ITO, nanocrystalline ITO, and the recently reported ternary cation TCO, Ga3-xIn5+xSn2O16. The influence of non-reduceable tin-oxygen complexes at high doping levels is identified for ITO. Ramifications for In-based TCO properties are discussed.",

author = "Hwang, {J. H.} and Edwards, {D. D.} and Kammler, {D. R.} and Mason, {T. O.}",

note = "Funding Information: This work was supported by the MRSEC program of the National Science Foundation (DMR-9632472) at the Materials Research Center of Northwestern University and made use of the Central Facilities supported by the same MRSEC program. JH and TOM also acknowledge the support of the US Department of Energy under grant no. FG02-84-ER45097. DRK was supported by a National Science Foundation Graduate Fellowship. ",

year = "2000",

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doi = "10.1016/S0167-2738(99)00321-5",

language = "English (US)",

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AU - Hwang, J. H.

AU - Edwards, D. D.

AU - Kammler, D. R.

AU - Mason, T. O.

N1 - Funding Information: This work was supported by the MRSEC program of the National Science Foundation (DMR-9632472) at the Materials Research Center of Northwestern University and made use of the Central Facilities supported by the same MRSEC program. JH and TOM also acknowledge the support of the US Department of Energy under grant no. FG02-84-ER45097. DRK was supported by a National Science Foundation Graduate Fellowship.

PY - 2000/4

Y1 - 2000/4

N2 - In-based transparent conducting oxides (TCOs) share the prevailing defect structure of indium-tin oxide (ITO), i.e. electrons, isolated SnIn donors, and neutral associates, believed to be (2SnInO″i)x. The present work reviews the state of the literature, presents calculated Brouwer diagrams vs. oxygen partial pressure and vs. dopant concentration, and reports intermediate temperature electrical property data (thermopower, conductivity) vs. pO2 and Sn concentration for three systems - polycrystalline bulk ITO, nanocrystalline ITO, and the recently reported ternary cation TCO, Ga3-xIn5+xSn2O16. The influence of non-reduceable tin-oxygen complexes at high doping levels is identified for ITO. Ramifications for In-based TCO properties are discussed.

AB - In-based transparent conducting oxides (TCOs) share the prevailing defect structure of indium-tin oxide (ITO), i.e. electrons, isolated SnIn donors, and neutral associates, believed to be (2SnInO″i)x. The present work reviews the state of the literature, presents calculated Brouwer diagrams vs. oxygen partial pressure and vs. dopant concentration, and reports intermediate temperature electrical property data (thermopower, conductivity) vs. pO2 and Sn concentration for three systems - polycrystalline bulk ITO, nanocrystalline ITO, and the recently reported ternary cation TCO, Ga3-xIn5+xSn2O16. The influence of non-reduceable tin-oxygen complexes at high doping levels is identified for ITO. Ramifications for In-based TCO properties are discussed.

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Point defects and electrical properties of Sn-doped In-based transparent conducting oxides

Abstract

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