Polarity determination of a GaN thin film on sapphire (0001) with x-ray standing waves

A. Kazimirov; G. Scherb; J. Zegenhagen; T. L. Lee; M. J. Bedzyk; M. K. Kelly; H. Angerer; O. Ambacher

doi:10.1063/1.368240

Polarity determination of a GaN thin film on sapphire (0001) with x-ray standing waves

A. Kazimirov^*, G. Scherb, J. Zegenhagen, T. L. Lee, M. J. Bedzyk, M. K. Kelly, H. Angerer, O. Ambacher

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The x-ray standing wave technique was used to determine the polarity of a 1 μm thick GaN film grown by molecular beam epitaxy on an α-Al₂O₃(0001) single crystal. The standing wave was generated by x-ray diffraction from the GaN film. The Ga K_α fluorescence yield was recorded as a function of incidence angle within the range of the GaN(0002) reflection. Analysis of the data reveals that the film has grown with N polarity, i.e., the nitrogen atoms occupy the top half of the wurtzite (0001) bilayers.

Original language	English (US)
Pages (from-to)	1703-1705
Number of pages	3
Journal	Journal of Applied Physics
Volume	84
Issue number	3
DOIs	https://doi.org/10.1063/1.368240
State	Published - Aug 1 1998

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Polarity determination of a GaN thin film on sapphire (0001) with x-ray standing waves",

abstract = "The x-ray standing wave technique was used to determine the polarity of a 1 μm thick GaN film grown by molecular beam epitaxy on an α-Al2O3(0001) single crystal. The standing wave was generated by x-ray diffraction from the GaN film. The Ga Kα fluorescence yield was recorded as a function of incidence angle within the range of the GaN(0002) reflection. Analysis of the data reveals that the film has grown with N polarity, i.e., the nitrogen atoms occupy the top half of the wurtzite (0001) bilayers.",

author = "A. Kazimirov and G. Scherb and J. Zegenhagen and Lee, {T. L.} and Bedzyk, {M. J.} and Kelly, {M. K.} and H. Angerer and O. Ambacher",

year = "1998",

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T1 - Polarity determination of a GaN thin film on sapphire (0001) with x-ray standing waves

AU - Kazimirov, A.

AU - Scherb, G.

AU - Zegenhagen, J.

AU - Lee, T. L.

AU - Bedzyk, M. J.

AU - Kelly, M. K.

AU - Angerer, H.

AU - Ambacher, O.

PY - 1998/8/1

Y1 - 1998/8/1

N2 - The x-ray standing wave technique was used to determine the polarity of a 1 μm thick GaN film grown by molecular beam epitaxy on an α-Al2O3(0001) single crystal. The standing wave was generated by x-ray diffraction from the GaN film. The Ga Kα fluorescence yield was recorded as a function of incidence angle within the range of the GaN(0002) reflection. Analysis of the data reveals that the film has grown with N polarity, i.e., the nitrogen atoms occupy the top half of the wurtzite (0001) bilayers.

AB - The x-ray standing wave technique was used to determine the polarity of a 1 μm thick GaN film grown by molecular beam epitaxy on an α-Al2O3(0001) single crystal. The standing wave was generated by x-ray diffraction from the GaN film. The Ga Kα fluorescence yield was recorded as a function of incidence angle within the range of the GaN(0002) reflection. Analysis of the data reveals that the film has grown with N polarity, i.e., the nitrogen atoms occupy the top half of the wurtzite (0001) bilayers.

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Polarity determination of a GaN thin film on sapphire (0001) with x-ray standing waves

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