Polarity determination of a GaN thin film on sapphire (0001) with x-ray standing waves

A. Kazimirov*, G. Scherb, J. Zegenhagen, T. L. Lee, M. J. Bedzyk, M. K. Kelly, H. Angerer, O. Ambacher

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

The x-ray standing wave technique was used to determine the polarity of a 1 μm thick GaN film grown by molecular beam epitaxy on an α-Al2O3(0001) single crystal. The standing wave was generated by x-ray diffraction from the GaN film. The Ga Kα fluorescence yield was recorded as a function of incidence angle within the range of the GaN(0002) reflection. Analysis of the data reveals that the film has grown with N polarity, i.e., the nitrogen atoms occupy the top half of the wurtzite (0001) bilayers.

Original languageEnglish (US)
Pages (from-to)1703-1705
Number of pages3
JournalJournal of Applied Physics
Volume84
Issue number3
DOIs
StatePublished - Aug 1 1998

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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