Polarity inversion of CdTe(111) orientation grown on Bi (00.1) by molecular beam epitaxy

A. Divenere; X. J. Yi; C. L. Hou; H. C. Wang; J. B. Ketterson; G. K. Wong; I. K. Sou

doi:10.1063/1.109271

Polarity inversion of CdTe(111) orientation grown on Bi (00.1) by molecular beam epitaxy

A. Divenere, X. J. Yi, C. L. Hou, H. C. Wang, J. B. Ketterson, G. K. Wong, I. K. Sou

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

Abstract

Using in situ reflection high-energy electron diffraction analysis and chemical etching it is shown that CdTe grown on Bi layers deposited on CdTe (1̄1̄1̄)B terminated surfaces result in (111)A terminated surfaces. The Bi layers exhibit streaked diffraction patterns with clear Kikuchi lines; this is the first direct evidence for the layer by layer two-dimensional growth of Bi on CdTe by molecular beam epitaxy.

Original language	English (US)
Pages (from-to)	2640-2642
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	21
DOIs	https://doi.org/10.1063/1.109271
State	Published - 1993

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.109271

Cite this

@article{1cdcb5ec7be64fa0a9e153f16aea4c4a,

title = "Polarity inversion of CdTe(111) orientation grown on Bi (00.1) by molecular beam epitaxy",

abstract = "Using in situ reflection high-energy electron diffraction analysis and chemical etching it is shown that CdTe grown on Bi layers deposited on CdTe ({\=1}{\=1}{\=1})B terminated surfaces result in (111)A terminated surfaces. The Bi layers exhibit streaked diffraction patterns with clear Kikuchi lines; this is the first direct evidence for the layer by layer two-dimensional growth of Bi on CdTe by molecular beam epitaxy.",

author = "A. Divenere and Yi, {X. J.} and Hou, {C. L.} and Wang, {H. C.} and Ketterson, {J. B.} and Wong, {G. K.} and Sou, {I. K.}",

year = "1993",

doi = "10.1063/1.109271",

language = "English (US)",

volume = "62",

pages = "2640--2642",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "21",

}

TY - JOUR

T1 - Polarity inversion of CdTe(111) orientation grown on Bi (00.1) by molecular beam epitaxy

AU - Divenere, A.

AU - Yi, X. J.

AU - Hou, C. L.

AU - Wang, H. C.

AU - Ketterson, J. B.

AU - Wong, G. K.

AU - Sou, I. K.

PY - 1993

Y1 - 1993

N2 - Using in situ reflection high-energy electron diffraction analysis and chemical etching it is shown that CdTe grown on Bi layers deposited on CdTe (1̄1̄1̄)B terminated surfaces result in (111)A terminated surfaces. The Bi layers exhibit streaked diffraction patterns with clear Kikuchi lines; this is the first direct evidence for the layer by layer two-dimensional growth of Bi on CdTe by molecular beam epitaxy.

AB - Using in situ reflection high-energy electron diffraction analysis and chemical etching it is shown that CdTe grown on Bi layers deposited on CdTe (1̄1̄1̄)B terminated surfaces result in (111)A terminated surfaces. The Bi layers exhibit streaked diffraction patterns with clear Kikuchi lines; this is the first direct evidence for the layer by layer two-dimensional growth of Bi on CdTe by molecular beam epitaxy.

UR - http://www.scopus.com/inward/record.url?scp=0000636904&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000636904&partnerID=8YFLogxK

U2 - 10.1063/1.109271

DO - 10.1063/1.109271

M3 - Article

AN - SCOPUS:0000636904

SN - 0003-6951

VL - 62

SP - 2640

EP - 2642

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Polarity inversion of CdTe(111) orientation grown on Bi (00.1) by molecular beam epitaxy

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this