Polarity inversion of type II InAsGaSb superlattice photodiodes

Binh Minh Nguyen; Darin Hoffman; Pierre Yves Delaunay; Manijeh Razeghi; Vaidya Nathan

doi:10.1063/1.2779855

Polarity inversion of type II InAsGaSb superlattice photodiodes

Binh Minh Nguyen^*, Darin Hoffman, Pierre Yves Delaunay, Manijeh Razeghi, Vaidya Nathan

^*Corresponding author for this work

Electrical and Computer Engineering

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60 Scopus citations

Abstract

The authors demonstrated the realization of p -on- n type II InAsGaSb superlattice photodiodes. Growth condition for high quality InAsSb layer lattice matched to GaSb was established for the use of an effective n -contact layer. By studying the effect of various GaSb capping layer thicknesses on the optical and electrical performances, an optimized thickness of 160 nm was determined. In comparison to as grown n -on- p superlattice photodiodes, this inverted design of p on n has shown similar quality. Finally, by analyzing Fabry-Perot interference fringes in the front side illuminated spectral measurement, the refractive index of the superlattice was determined to be approximately 3.8.

Original language	English (US)
Article number	103503
Journal	Applied Physics Letters
Volume	91
Issue number	10
DOIs	https://doi.org/10.1063/1.2779855
State	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Polarity inversion of type II InAsGaSb superlattice photodiodes",

abstract = "The authors demonstrated the realization of p -on- n type II InAsGaSb superlattice photodiodes. Growth condition for high quality InAsSb layer lattice matched to GaSb was established for the use of an effective n -contact layer. By studying the effect of various GaSb capping layer thicknesses on the optical and electrical performances, an optimized thickness of 160 nm was determined. In comparison to as grown n -on- p superlattice photodiodes, this inverted design of p on n has shown similar quality. Finally, by analyzing Fabry-Perot interference fringes in the front side illuminated spectral measurement, the refractive index of the superlattice was determined to be approximately 3.8.",

author = "Nguyen, {Binh Minh} and Darin Hoffman and Delaunay, {Pierre Yves} and Manijeh Razeghi and Vaidya Nathan",

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T1 - Polarity inversion of type II InAsGaSb superlattice photodiodes

AU - Nguyen, Binh Minh

AU - Hoffman, Darin

AU - Delaunay, Pierre Yves

AU - Razeghi, Manijeh

AU - Nathan, Vaidya

PY - 2007

Y1 - 2007

N2 - The authors demonstrated the realization of p -on- n type II InAsGaSb superlattice photodiodes. Growth condition for high quality InAsSb layer lattice matched to GaSb was established for the use of an effective n -contact layer. By studying the effect of various GaSb capping layer thicknesses on the optical and electrical performances, an optimized thickness of 160 nm was determined. In comparison to as grown n -on- p superlattice photodiodes, this inverted design of p on n has shown similar quality. Finally, by analyzing Fabry-Perot interference fringes in the front side illuminated spectral measurement, the refractive index of the superlattice was determined to be approximately 3.8.

AB - The authors demonstrated the realization of p -on- n type II InAsGaSb superlattice photodiodes. Growth condition for high quality InAsSb layer lattice matched to GaSb was established for the use of an effective n -contact layer. By studying the effect of various GaSb capping layer thicknesses on the optical and electrical performances, an optimized thickness of 160 nm was determined. In comparison to as grown n -on- p superlattice photodiodes, this inverted design of p on n has shown similar quality. Finally, by analyzing Fabry-Perot interference fringes in the front side illuminated spectral measurement, the refractive index of the superlattice was determined to be approximately 3.8.

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Polarity inversion of type II InAsGaSb superlattice photodiodes

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