Polarity inversion of type II InAsGaSb superlattice photodiodes

Binh Minh Nguyen*, Darin Hoffman, Pierre Yves Delaunay, Manijeh Razeghi, Vaidya Nathan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

57 Scopus citations

Abstract

The authors demonstrated the realization of p -on- n type II InAsGaSb superlattice photodiodes. Growth condition for high quality InAsSb layer lattice matched to GaSb was established for the use of an effective n -contact layer. By studying the effect of various GaSb capping layer thicknesses on the optical and electrical performances, an optimized thickness of 160 nm was determined. In comparison to as grown n -on- p superlattice photodiodes, this inverted design of p on n has shown similar quality. Finally, by analyzing Fabry-Perot interference fringes in the front side illuminated spectral measurement, the refractive index of the superlattice was determined to be approximately 3.8.

Original languageEnglish (US)
Article number103503
JournalApplied Physics Letters
Volume91
Issue number10
DOIs
StatePublished - Sep 13 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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