Polarization-dependence in multi-quantum well lasers and semiconductor optical amplifiers: probing interwell transport effects

D. Ban*, E. C.F. Wong, E. H. Sargent

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

While the mechanisms underlying the problem of interwell carrier density nonuniformity have been clarified via numerical modeling, the phenomenon remains to be observed directly via experiment. Proposed is a method of using the difference in the dependence of TE vs TM modal gain on nonuniformity of carrier density as a direct experimental probe of interwell transport effects.

Original languageEnglish (US)
Pages179-180
Number of pages2
DOIs
StatePublished - 2000
EventConference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA
Duration: May 7 2000May 12 2000

Other

OtherConference on Lasers and Electro-Optics (CLEO 2000)
CitySan Francisco, CA, USA
Period5/7/005/12/00

ASJC Scopus subject areas

  • General Physics and Astronomy

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